Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Abstract

Abstract only.
Original languageEnglish
Title of host publicationHETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands
Place of PublicationUtrecht, the Netherlands
Publication statusPublished - 2010
Eventconference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02 -
Duration: 1 Feb 20102 Feb 2010

Conference

Conferenceconference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02
Period1/02/102/02/10
OtherHETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

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