Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3

Research output: Contribution to conferenceOtherAcademic

Abstract

No abstract.

Conference

Conferenceconference; LG Electronics; 2010-04-01; 2010-04-01
Period1/04/101/04/10
OtherLG Electronics

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passivity
solar cells

Cite this

@conference{9c7eb4f29bab4ad39d1624bde72933ea,
title = "Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3",
abstract = "No abstract.",
author = "W.M.M. Kessels",
year = "2010",
language = "English",
note = "conference; LG Electronics; 2010-04-01; 2010-04-01 ; Conference date: 01-04-2010 Through 01-04-2010",

}

Kessels, WMM 2010, 'Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3' conference; LG Electronics; 2010-04-01; 2010-04-01, 1/04/10 - 1/04/10, .

Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3. / Kessels, W.M.M.

2010. conference; LG Electronics; 2010-04-01; 2010-04-01, .

Research output: Contribution to conferenceOtherAcademic

TY - CONF

T1 - Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3

AU - Kessels,W.M.M.

PY - 2010

Y1 - 2010

N2 - No abstract.

AB - No abstract.

M3 - Other

ER -

Kessels WMM. Excellent passivation of crystalline Si solar cells by atomic layer deposited Al2O3. 2010. conference; LG Electronics; 2010-04-01; 2010-04-01, .