Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

A.H.M. Smets; J.H. van Helden; M.C.M. van de Sanden

doi:10.1557/PROC-664-A22.4

Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

A.H.M. Smets, J.H. van Helden, M.C.M. van de Sanden

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

For the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 10¹² up to 1.4 × 10¹² cm^-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×10¹³ cm^-2.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A.
Editors	M. Stutzmann, J.B. Boyce
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	A2241-A2246
Number of pages	6
ISBN (Print)	1-55899-600-1
DOIs	https://doi.org/10.1557/PROC-664-A22.4
Publication status	Published - 1 Dec 2001
Event	Amorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	664
ISSN (Print)	0272-9172

Conference

Conference	Amorphous and Heterogeneous Silicon Based Films 2001
Country/Territory	United States
City	San Francisco, CA
Period	16/04/01 → 20/04/01

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10.1557/PROC-664-A22.4

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Smets, A. H. M., van Helden, J. H., & van de Sanden, M. C. M. (2001). Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. In M. Stutzmann, & J. B. Boyce (Eds.), Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A. (pp. A2241-A2246). Article A22.4 (Materials Research Society Symposium Proceedings; Vol. 664). Materials Research Society. https://doi.org/10.1557/PROC-664-A22.4

Smets, A.H.M. ; van Helden, J.H. ; van de Sanden, M.C.M. / Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A.. editor / M. Stutzmann ; J.B. Boyce. Warrendale : Materials Research Society, 2001. pp. A2241-A2246 (Materials Research Society Symposium Proceedings).

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abstract = "For the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 1012 up to 1.4 × 1012 cm-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×1013 cm-2.",

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Smets, AHM, van Helden, JH & van de Sanden, MCM 2001, Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. in M Stutzmann & JB Boyce (eds), Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A.., A22.4, Materials Research Society Symposium Proceedings, vol. 664, Materials Research Society, Warrendale, pp. A2241-A2246, Amorphous and Heterogeneous Silicon Based Films 2001, San Francisco, CA, United States, 16/04/01. https://doi.org/10.1557/PROC-664-A22.4

Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. / Smets, A.H.M.; van Helden, J.H.; van de Sanden, M.C.M.
Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A.. ed. / M. Stutzmann; J.B. Boyce. Warrendale: Materials Research Society, 2001. p. A2241-A2246 A22.4 (Materials Research Society Symposium Proceedings; Vol. 664).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

AU - Smets, A.H.M.

AU - van Helden, J.H.

AU - van de Sanden, M.C.M.

PY - 2001/12/1

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N2 - For the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 1012 up to 1.4 × 1012 cm-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×1013 cm-2.

AB - For the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 1012 up to 1.4 × 1012 cm-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×1013 cm-2.

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T3 - Materials Research Society Symposium Proceedings

SP - A2241-A2246

BT - Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A.

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PB - Materials Research Society

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Smets AHM, van Helden JH, van de Sanden MCM. Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique. In Stutzmann M, Boyce JB, editors, Amorphous and heterogeneous silicon-based films : symposium, 2001, held April 16-20, San Francisco, California, U.S.A.. Warrendale: Materials Research Society. 2001. p. A2241-A2246. A22.4. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-664-A22.4

Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

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