Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D. Tio Castro, L. Goux, G.A.M. Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F.J. Jedema, M.A.A. In't Zandt, R.A.M. Wolters, D.J. Gravesteijn, M.A. Verheijen, M. Kaiser, R.G.R. Weemaes, D.J. Wouters

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

58 Citations (Scopus)

Abstract

We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ∼55% and Set voltages by ∼28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

Original languageEnglish
Title of host publication2007 IEEE International Electron Devices Meeting
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages315-318
Number of pages4
ISBN (Print)978-1-4244-1507-6
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
Event2007 IEEE International Electron Devices Meeting (IEDM 2007) - Washington, DC, United States
Duration: 10 Dec 200712 Dec 2007

Conference

Conference2007 IEEE International Electron Devices Meeting (IEDM 2007)
Abbreviated titleIDEM 2007
CountryUnited States
CityWashington, DC
Period10/12/0712/12/07

Fingerprint Dive into the research topics of 'Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells'. Together they form a unique fingerprint.

Cite this