Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D. Tio Castro; L. Goux; G.A.M. Hurkx; K. Attenborough; R. Delhougne; J. Lisoni; F.J. Jedema; M.A.A. In't Zandt; R.A.M. Wolters; D.J. Gravesteijn; M.A. Verheijen; M. Kaiser; R.G.R. Weemaes; D.J. Wouters

doi:10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D. Tio Castro, L. Goux, G.A.M. Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F.J. Jedema, M.A.A. In't Zandt, R.A.M. Wolters, D.J. Gravesteijn, M.A. Verheijen, M. Kaiser, R.G.R. Weemaes, D.J. Wouters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

63 Citations (Scopus)

Abstract

We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ∼55% and Set voltages by ∼28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

Original language	English
Title of host publication	2007 IEEE International Electron Devices Meeting
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	315-318
Number of pages	4
ISBN (Print)	978-1-4244-1507-6
DOIs	https://doi.org/10.1109/IEDM.2007.4418934
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM 2007 - Washington, United States Duration: 10 Dec 2007 → 12 Dec 2007

Conference

Conference	2007 IEEE International Electron Devices Meeting, IEDM 2007
Abbreviated title	IDEM 2007
Country/Territory	United States
City	Washington
Period	10/12/07 → 12/12/07

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10.1109/IEDM.2007.4418934

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Castro, D. T., Goux, L., Hurkx, G. A. M., Attenborough, K., Delhougne, R., Lisoni, J., Jedema, F. J., In't Zandt, M. A. A., Wolters, R. A. M., Gravesteijn, D. J., Verheijen, M. A., Kaiser, M., Weemaes, R. G. R., & Wouters, D. J. (2007). Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. In 2007 IEEE International Electron Devices Meeting (pp. 315-318). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.2007.4418934

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title = "Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells",

abstract = "We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ∼55% and Set voltages by ∼28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.",

author = "Castro, {D. Tio} and L. Goux and G.A.M. Hurkx and K. Attenborough and R. Delhougne and J. Lisoni and F.J. Jedema and {In't Zandt}, M.A.A. and R.A.M. Wolters and D.J. Gravesteijn and M.A. Verheijen and M. Kaiser and R.G.R. Weemaes and D.J. Wouters",

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doi = "10.1109/IEDM.2007.4418934",

language = "English",

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pages = "315--318",

booktitle = "2007 IEEE International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "2007 IEEE International Electron Devices Meeting, IEDM 2007, IDEM 2007 ; Conference date: 10-12-2007 Through 12-12-2007",

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Castro, DT, Goux, L, Hurkx, GAM, Attenborough, K, Delhougne, R, Lisoni, J, Jedema, FJ, In't Zandt, MAA, Wolters, RAM, Gravesteijn, DJ, Verheijen, MA, Kaiser, M, Weemaes, RGR & Wouters, DJ 2007, Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. in 2007 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, Piscataway, pp. 315-318, 2007 IEEE International Electron Devices Meeting, IEDM 2007, Washington, California, United States, 10/12/07. https://doi.org/10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. / Castro, D. Tio; Goux, L.; Hurkx, G.A.M. et al.
2007 IEEE International Electron Devices Meeting. Piscataway: Institute of Electrical and Electronics Engineers, 2007. p. 315-318.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

AU - Castro, D. Tio

AU - Goux, L.

AU - Hurkx, G.A.M.

AU - Attenborough, K.

AU - Delhougne, R.

AU - Lisoni, J.

AU - Jedema, F.J.

AU - In't Zandt, M.A.A.

AU - Wolters, R.A.M.

AU - Gravesteijn, D.J.

AU - Verheijen, M.A.

AU - Kaiser, M.

AU - Weemaes, R.G.R.

AU - Wouters, D.J.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ∼55% and Set voltages by ∼28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

AB - We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ∼55% and Set voltages by ∼28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

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M3 - Conference contribution

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SN - 978-1-4244-1507-6

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BT - 2007 IEEE International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers

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T2 - 2007 IEEE International Electron Devices Meeting, IEDM 2007

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ER -

Castro DT, Goux L, Hurkx GAM, Attenborough K, Delhougne R, Lisoni J et al. Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. In 2007 IEEE International Electron Devices Meeting. Piscataway: Institute of Electrical and Electronics Engineers. 2007. p. 315-318 doi: 10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

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