Abstract
We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ∼55% and Set voltages by ∼28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.
Original language | English |
---|---|
Title of host publication | 2007 IEEE International Electron Devices Meeting |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 315-318 |
Number of pages | 4 |
ISBN (Print) | 978-1-4244-1507-6 |
DOIs | |
Publication status | Published - 1 Dec 2007 |
Externally published | Yes |
Event | 2007 IEEE International Electron Devices Meeting, IEDM 2007 - Washington, United States Duration: 10 Dec 2007 → 12 Dec 2007 |
Conference
Conference | 2007 IEEE International Electron Devices Meeting, IEDM 2007 |
---|---|
Abbreviated title | IDEM 2007 |
Country/Territory | United States |
City | Washington |
Period | 10/12/07 → 12/12/07 |