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Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode
M. Tapajna, A. Rosova, K. Husekova, F. Roozeboom, E. Dobrocka, K. Frohlich
Research output: Contribution to journal › Article › Academic › peer-review
6
Citations
(Scopus)