Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

Karsten Arts, J.H. Deijkers, Tahsin Faraz, R.L. Puurunen, W.M.M. Kessels, Harm C.M. Knoops

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2020
Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
Arts, K., Deijkers, J. H., Faraz, T., Puurunen, R. L., Kessels, W. M. M. (Corresponding author) & Knoops, H. C. M. (Corresponding author), 20 Jul 2020, In: Applied Physics Letters. 117, 3, 5 p., 031602.
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Evidence for Low-energy Ions Influencing Plasma-assisted Atomic Layer Deposition of SiO2: Impact on the Growth per Cycle and Wet Etch Rate
Kessels, W. M. M., 1 Sept 2020, In: ILTPC Newsletter. 6, 1 p.
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