Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

Karsten Arts; J.H. Deijkers; Tahsin Faraz; R.L. Puurunen; W.M.M. Kessels; Harm C.M.  Knoops

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

Karsten Arts, J.H. Deijkers, Tahsin Faraz, R.L. Puurunen, W.M.M. Kessels, Harm C.M. Knoops

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Original language	English
Publisher	Impedans Plasma Measurement
Number of pages	2
Publication status	Published - Aug 2020

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Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
Arts, K., Deijkers, J. H., Faraz, T., Puurunen, R. L., Kessels, W. M. M. (Corresponding author) & Knoops, H. C. M. (Corresponding author), 20 Jul 2020, In: Applied Physics Letters. 117, 3, 5 p., 031602.
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Evidence for Low-energy Ions Influencing Plasma-assisted Atomic Layer Deposition of SiO2: Impact on the Growth per Cycle and Wet Etch Rate
Kessels, W. M. M., 1 Sept 2020, In: ILTPC Newsletter. 6, 1 p.
Research output: Contribution to journal › Article › Professional

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Cite this

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title = "Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]",

author = "Karsten Arts and J.H. Deijkers and Tahsin Faraz and R.L. Puurunen and W.M.M. Kessels and Knoops, {Harm C.M.}",

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language = "English",

publisher = "Impedans Plasma Measurement",

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TY - BOOK

T1 - Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System

T2 - Application note [QC03]

AU - Arts, Karsten

AU - Deijkers, J.H.

AU - Faraz, Tahsin

AU - Puurunen, R.L.

AU - Kessels, W.M.M.

AU - Knoops, Harm C.M.

PY - 2020/8

Y1 - 2020/8

M3 - Report

BT - Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System

PB - Impedans Plasma Measurement

ER -

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2 as measured with Impedans' Quantum System: Application note [QC03]

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Research output

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

Evidence for Low-energy Ions Influencing Plasma-assisted Atomic Layer Deposition of SiO2: Impact on the Growth per Cycle and Wet Etch Rate

Cite this