Evaluation of test algorithms stress effect on SRAMs under neutron radiation

Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri, Arnaud Virazel, Antoine D. Touboul, Frederic Wrobel, Frédéric Saigné

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

11 Citations (Scopus)


Electronic system reliability over soft errors is very critical as the transistor size shrinks. Many recent works have defined the device error rate under radiation for SRAMs in hold mode (static) and during operation (dynamic). This paper evaluates the impact of running test algorithms on SRAMs exposed to neutron radiation in order to define their stressing factor. The results that we show are based on experiments performed at the TSL facility in Uppsala, Sweden using a Quasi-Monoenergetic neutron beam. The evaluation of the test algorithms is based on the calculated device SEU cross section.
Original languageEnglish
Title of host publication2012 IEEE 18th International On-Line Testing Symposium (IOLTS)
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-4673-2085-6
ISBN (Print)978-1-4673-2082-5
Publication statusPublished - 27 Sept 2012
Externally publishedYes
Event18th International On-Line Testing Symposium (IOLTS 2012) - Sitges, Spain
Duration: 27 Jun 201229 Jun 2012


Conference18th International On-Line Testing Symposium (IOLTS 2012)


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