Abstract
Electronic system reliability over soft errors is very critical as the transistor size shrinks. Many recent works have defined the device error rate under radiation for SRAMs in hold mode (static) and during operation (dynamic). This paper evaluates the impact of running test algorithms on SRAMs exposed to neutron radiation in order to define their stressing factor. The results that we show are based on experiments performed at the TSL facility in Uppsala, Sweden using a Quasi-Monoenergetic neutron beam. The evaluation of the test algorithms is based on the calculated device SEU cross section.
Original language | English |
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Title of host publication | 2012 IEEE 18th International On-Line Testing Symposium (IOLTS) |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 121-122 |
Number of pages | 2 |
ISBN (Electronic) | 978-1-4673-2085-6 |
ISBN (Print) | 978-1-4673-2082-5 |
DOIs | |
Publication status | Published - 27 Sept 2012 |
Externally published | Yes |
Event | 18th International On-Line Testing Symposium (IOLTS 2012) - Sitges, Spain Duration: 27 Jun 2012 → 29 Jun 2012 |
Conference
Conference | 18th International On-Line Testing Symposium (IOLTS 2012) |
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Country/Territory | Spain |
City | Sitges |
Period | 27/06/12 → 29/06/12 |