Evaluation of precursors for the chemical vapour deposition of tin oxide

A.M.B. Mol, van, G.R. Alcott, M.H.J.M. Croon, de, C.I.M.A. Spee, J.C. Schouten

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A comparison is made with respect to deposition kinetics and film properties for Sn oxide thin films grown from a variety of precursors in an atm. pressure CVD system. Deposition was performed on glass and Al substrates using the precursors monobutyltin trichloride, dimethyltin dichloride, monomethyltin trichloride, Sn tetrachloride, and tetramethyltin with O as oxidant. Apparent activation energies were calcd. for each precursor using the Arrhenius equation, giving different activation energies for both substrates. The highest deposition rates on both glass and Al substrates at temps.
Original languageEnglish
Title of host publicationChemical Vapor Deposition: CVD XV (15th), Toronto, Canada, Spring 2000
EditorsM.D. Allendorff, T.M. Besmann
Pages765-772
Publication statusPublished - 2000

Publication series

NameECS Transactions
Volume2000-13
ISSN (Print)1938-6737

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