In the design and fabrication of micro-electronic circuits, it is necessary to simulate and predict many kinds of effects, such as substrate crosstalk, interconnect delays and others. In order to simulate and predict properly these effects, accurate and efficient substrate modeling methods are required. Substrate resistance extraction involves finding a resistance network between ports correctly describing the behaviour of the substrate. In this report we consider the problem of resistance extraction of a substrate with a homogeneous doping profile. We solve the problem by means of two discretization methods, namely the finite element method (FEM) and the boundary element method (BEM) and discuss the advantages and disadvantages of each of these methods. We particularly addresses the problem of achieving grid-independent results and characterize the cases in which one technique is better than the other.