Etching with atomic-level precision: The emerging field of atomic layer etching

Following the example of ALD, its etching counterpart atomic layer etching (ALE) is currently being implemented in the semiconductor industry for the fabrication of integrated circuits. ALE enables either anisotropic or isotropic etching with atomic-level precision based on sequential and self-limiting half-reactions. This article describes the basics of ALE and its main characteristics, and briefly reviews the
current status of the field. An outlook to future research is also provided.