Etching of deep macropores in 6 in. Si wafers

J.E.A.M. van den Meerakker; R.J.G. Elfrink; F. Roozeboom; J.F.C.M. Verhoeven

doi:10.1149/1.1393602

Etching of deep macropores in 6 in. Si wafers

J.E.A.M. van den Meerakker, R.J.G. Elfrink, F. Roozeboom, J.F.C.M. Verhoeven

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Abstract

The process of photoanodic etching of deep pores in lightly doped n^--Si wafers was investigated. On a 6 in. wafer, more than 1 billion pores, regularly distributed over the wafer in a hexagonal array with a pitch of 3.5 μm, were obtained using an electrolytic back contact. The diameter of the pores was about 2 μm and depths up to 400 μm could be achieved. Kinetic experiments revealed that the etching process was diffusion controlled in a solution containing HF, H₂O, and ethanol. Electrochemical experiments showed that H₂ evolution took place at the back side of the Si wafer and that H₂ and O₂ evolved at the Pt cathode and anode, respectively.

Original language	English
Pages (from-to)	2757-2761
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	7
DOIs	https://doi.org/10.1149/1.1393602
Publication status	Published - 1 Jul 2000
Externally published	Yes

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title = "Etching of deep macropores in 6 in. Si wafers",

abstract = "The process of photoanodic etching of deep pores in lightly doped n--Si wafers was investigated. On a 6 in. wafer, more than 1 billion pores, regularly distributed over the wafer in a hexagonal array with a pitch of 3.5 μm, were obtained using an electrolytic back contact. The diameter of the pores was about 2 μm and depths up to 400 μm could be achieved. Kinetic experiments revealed that the etching process was diffusion controlled in a solution containing HF, H2O, and ethanol. Electrochemical experiments showed that H2 evolution took place at the back side of the Si wafer and that H2 and O2 evolved at the Pt cathode and anode, respectively.",

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AU - van den Meerakker, J.E.A.M.

AU - Elfrink, R.J.G.

AU - Roozeboom, F.

AU - Verhoeven, J.F.C.M.

PY - 2000/7/1

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AB - The process of photoanodic etching of deep pores in lightly doped n--Si wafers was investigated. On a 6 in. wafer, more than 1 billion pores, regularly distributed over the wafer in a hexagonal array with a pitch of 3.5 μm, were obtained using an electrolytic back contact. The diameter of the pores was about 2 μm and depths up to 400 μm could be achieved. Kinetic experiments revealed that the etching process was diffusion controlled in a solution containing HF, H2O, and ethanol. Electrochemical experiments showed that H2 evolution took place at the back side of the Si wafer and that H2 and O2 evolved at the Pt cathode and anode, respectively.

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Etching of deep macropores in 6 in. Si wafers

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