Etching: a two-dimensional mathematical approach

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    Abstract

    A mathematical model for the etching of a semi-infinite active surface is presented. The model assumes that the transport of the active species occurs solely by diffusion. It is shown that, when the diffusion field propagates much faster than the etched surface, the problem can be solved by a singular perturbation technique, which distinguishes a near field in the area where the moving surface and the non-etchable mask meet, and a far field where edge effects may be disregarded to first order. The leading terms of a composite expansion are given, from which the shape of the moving boundary can be determined at all times.
    Original languageEnglish
    Pages (from-to)199-225
    Number of pages27
    JournalProceedings of the Royal Society of London. Series A
    Volume392
    Issue number1802
    DOIs
    Publication statusPublished - 1984

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