Erratum: "Height control of self-assembled quantum dots by strain engineering during capping" [Appl. Phys. Lett. 105, 143104 (2014)]

Davide Grossi, P. Smereka, J.G. Keizer, J.M. Ulloa, P.M. Koenraad

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Abstract

Two of the histograms in Fig. 3 have been accidentally swapped. 1 The third histogram (blue bars) represents the height distribution for quantum dots (QDs) capped with In x Ga (1- x )As, where x¿=¿0.05. The corresponding average height is 3.1¿±¿0.4¿nm. The second histogram (green bars) represents the height distribution for QD capped with In x Ga (1- x )As, where x¿=¿0.10. The average height for this distribution is 4.0¿±¿0.5¿nm.
Original languageEnglish
Pages (from-to)199901-1
Number of pages1
JournalApplied Physics Letters
Volume105
Issue number19
DOIs
Publication statusPublished - 2014

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