Erratum: "Height control of self-assembled quantum dots by strain engineering during capping" [Appl. Phys. Lett. 105, 143104 (2014)]

Davide Grossi; P. Smereka; J.G. Keizer; J.M. Ulloa; P.M. Koenraad

doi:10.1063/1.4901731

Erratum: "Height control of self-assembled quantum dots by strain engineering during capping" [Appl. Phys. Lett. 105, 143104 (2014)]

Davide Grossi, P. Smereka, J.G. Keizer, J.M. Ulloa, P.M. Koenraad

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Abstract

Two of the histograms in Fig. 3 have been accidentally swapped. 1 The third histogram (blue bars) represents the height distribution for quantum dots (QDs) capped with In x Ga (1- x )As, where x¿=¿0.05. The corresponding average height is 3.1¿±¿0.4¿nm. The second histogram (green bars) represents the height distribution for QD capped with In x Ga (1- x )As, where x¿=¿0.10. The average height for this distribution is 4.0¿±¿0.5¿nm.

Original language	English
Pages (from-to)	199901-1
Number of pages	1
Journal	Applied Physics Letters
Volume	105
Issue number	19
DOIs	https://doi.org/10.1063/1.4901731
Publication status	Published - 2014

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title = "Erratum: {"}Height control of self-assembled quantum dots by strain engineering during capping{"} [Appl. Phys. Lett. 105, 143104 (2014)]",

abstract = "Two of the histograms in Fig. 3 have been accidentally swapped. 1 The third histogram (blue bars) represents the height distribution for quantum dots (QDs) capped with In x Ga (1- x )As, where x¿=¿0.05. The corresponding average height is 3.1¿±¿0.4¿nm. The second histogram (green bars) represents the height distribution for QD capped with In x Ga (1- x )As, where x¿=¿0.10. The average height for this distribution is 4.0¿±¿0.5¿nm.",

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AU - Keizer, J.G.

AU - Ulloa, J.M.

AU - Koenraad, P.M.

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Y1 - 2014

N2 - Two of the histograms in Fig. 3 have been accidentally swapped. 1 The third histogram (blue bars) represents the height distribution for quantum dots (QDs) capped with In x Ga (1- x )As, where x¿=¿0.05. The corresponding average height is 3.1¿±¿0.4¿nm. The second histogram (green bars) represents the height distribution for QD capped with In x Ga (1- x )As, where x¿=¿0.10. The average height for this distribution is 4.0¿±¿0.5¿nm.

AB - Two of the histograms in Fig. 3 have been accidentally swapped. 1 The third histogram (blue bars) represents the height distribution for quantum dots (QDs) capped with In x Ga (1- x )As, where x¿=¿0.05. The corresponding average height is 3.1¿±¿0.4¿nm. The second histogram (green bars) represents the height distribution for QD capped with In x Ga (1- x )As, where x¿=¿0.10. The average height for this distribution is 4.0¿±¿0.5¿nm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Erratum: "Height control of self-assembled quantum dots by strain engineering during capping" [Appl. Phys. Lett. 105, 143104 (2014)]

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