Epitaxial III-V nanowires on silicon for vertical devices

E.P.A.M. Bakkers; M.T. Borgström; W. Einden, Van Den; M.H.M. Weert, van; A. Helman; M.A. Verheijen

doi:10.1149/1.2356301

Epitaxial III-V nanowires on silicon for vertical devices

E.P.A.M. Bakkers, M.T. Borgström, W. Einden, Van Den, M.H.M. Weert, van, A. Helman, M.A. Verheijen

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial heterostructures to optimize device performance. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with X-ray diffraction pole figures and cross-sectional transmission electron microscopy. In addition, e-beam lithography was used to predefine the position of the nanowires. Finally, the synthesis of heterostructured nanowires is discussed.

Original language	English
Pages (from-to)	415-423
Journal	ECS Transactions
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.2356301
Publication status	Published - 2006

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@article{eaa74480ab664fefbe06d4c0b5f0f043,

title = "Epitaxial III-V nanowires on silicon for vertical devices",

abstract = "We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial heterostructures to optimize device performance. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with X-ray diffraction pole figures and cross-sectional transmission electron microscopy. In addition, e-beam lithography was used to predefine the position of the nanowires. Finally, the synthesis of heterostructured nanowires is discussed.",

author = "E.P.A.M. Bakkers and M.T. Borgstr{\"o}m and {Einden, Van Den}, W. and {Weert, van}, M.H.M. and A. Helman and M.A. Verheijen",

year = "2006",

doi = "10.1149/1.2356301",

language = "English",

volume = "3",

pages = "415--423",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Epitaxial III-V nanowires on silicon for vertical devices

AU - Bakkers, E.P.A.M.

AU - Borgström, M.T.

AU - Einden, Van Den, W.

AU - Weert, van, M.H.M.

AU - Helman, A.

AU - Verheijen, M.A.

PY - 2006

Y1 - 2006

N2 - We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial heterostructures to optimize device performance. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with X-ray diffraction pole figures and cross-sectional transmission electron microscopy. In addition, e-beam lithography was used to predefine the position of the nanowires. Finally, the synthesis of heterostructured nanowires is discussed.

AB - We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial heterostructures to optimize device performance. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with X-ray diffraction pole figures and cross-sectional transmission electron microscopy. In addition, e-beam lithography was used to predefine the position of the nanowires. Finally, the synthesis of heterostructured nanowires is discussed.

U2 - 10.1149/1.2356301

DO - 10.1149/1.2356301

M3 - Article

SN - 1938-5862

VL - 3

SP - 415

EP - 423

JO - ECS Transactions

JF - ECS Transactions

IS - 2

ER -

Epitaxial III-V nanowires on silicon for vertical devices

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