Epitaxial III-V nanowires on silicon for vertical devices

E.P.A.M. Bakkers, M.T. Borgström, W. Einden, Van Den, M.H.M. Weert, van, A. Helman, M.A. Verheijen

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Abstract

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial heterostructures to optimize device performance. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with X-ray diffraction pole figures and cross-sectional transmission electron microscopy. In addition, e-beam lithography was used to predefine the position of the nanowires. Finally, the synthesis of heterostructured nanowires is discussed.
Original languageEnglish
Pages (from-to)415-423
JournalECS Transactions
Volume3
Issue number2
DOIs
Publication statusPublished - 2006

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    Bakkers, E. P. A. M., Borgström, M. T., Einden, Van Den, W., Weert, van, M. H. M., Helman, A., & Verheijen, M. A. (2006). Epitaxial III-V nanowires on silicon for vertical devices. ECS Transactions, 3(2), 415-423. https://doi.org/10.1149/1.2356301