Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

Mohsen Akbari; Paula Diaz Reigosa; Amir Sajjad Bahman; Lorenzo Ceccarelli; Francesco Iannuzzo; Mohammad Tavakoli Bina

doi:10.23919/EPE.2019.8915545

Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

Mohsen Akbari
, Paula Diaz Reigosa
, Amir Sajjad Bahman
, Lorenzo Ceccarelli
, Francesco Iannuzzo
, Mohammad Tavakoli Bina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.

Original language	English
Title of host publication	2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	9
ISBN (Electronic)	978-9-0758-1531-3
ISBN (Print)	978-1-7281-2361-5
DOIs	https://doi.org/10.23919/EPE.2019.8915545
Publication status	Published - Sept 2019
Externally published	Yes
Event	21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe - Via Magazzini del Cotone, Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019 Conference number: 21 http://epe-ecce-conferences.com/epe2019/

Conference

Conference	21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Abbreviated title	EPE 2019 ECCE
Country/Territory	Italy
City	Genova
Period	3/09/19 → 5/09/19
Internet address	http://epe-ecce-conferences.com/epe2019/

Keywords

Device modeling
Emerging technology
IGBT
Thermal design
Thermal stress

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10.23919/EPE.2019.8915545

Cite this

Akbari, M., Reigosa, P. D., Bahman, A. S., Ceccarelli, L., Iannuzzo, F., & Bina, M. T. (2019). Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages. In 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe Article 8915545 Institute of Electrical and Electronics Engineers. https://doi.org/10.23919/EPE.2019.8915545

@inproceedings{ed8abf23b1614f649a3a73ac0da9e240,

title = "Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages",

abstract = "In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.",

keywords = "Device modeling, Emerging technology, IGBT, Thermal design, Thermal stress",

author = "Mohsen Akbari and Reigosa, \{Paula Diaz\} and Bahman, \{Amir Sajjad\} and Lorenzo Ceccarelli and Francesco Iannuzzo and Bina, \{Mohammad Tavakoli\}",

note = "Publisher Copyright: {\textcopyright} 2019 EPE Association.; 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, EPE 2019 ECCE ; Conference date: 03-09-2019 Through 05-09-2019",

year = "2019",

month = sep,

doi = "10.23919/EPE.2019.8915545",

language = "English",

isbn = "978-1-7281-2361-5",

booktitle = "2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

url = "http://epe-ecce-conferences.com/epe2019/",

}

Akbari, M, Reigosa, PD, Bahman, AS, Ceccarelli, L, Iannuzzo, F & Bina, MT 2019, Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages. in 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe., 8915545, Institute of Electrical and Electronics Engineers, 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, Genova, Italy, 3/09/19. https://doi.org/10.23919/EPE.2019.8915545

Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages. / Akbari, Mohsen; Reigosa, Paula Diaz; Bahman, Amir Sajjad et al.
2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe. Institute of Electrical and Electronics Engineers, 2019. 8915545.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

AU - Akbari, Mohsen

AU - Reigosa, Paula Diaz

AU - Bahman, Amir Sajjad

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Bina, Mohammad Tavakoli

N1 - Conference code: 21

PY - 2019/9

Y1 - 2019/9

N2 - In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.

AB - In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.

KW - Device modeling

KW - Emerging technology

KW - IGBT

KW - Thermal design

KW - Thermal stress

UR - https://www.scopus.com/pages/publications/85076679561

U2 - 10.23919/EPE.2019.8915545

DO - 10.23919/EPE.2019.8915545

M3 - Conference contribution

AN - SCOPUS:85076679561

SN - 978-1-7281-2361-5

BT - 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

PB - Institute of Electrical and Electronics Engineers

T2 - 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

Y2 - 3 September 2019 through 5 September 2019

ER -

Enhancement of thermo-mechanical behavior of IGBT modules through engineered threshold voltages

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