Enhancement of the recombination rate of inas quantum dots in a photonic crystal light emitting diode

N.J.G. Chauvin, D.M.J. Bitauld, A. Fiore, L.P. Balet, L. Li, B. Alloing, M. Francardi, A. Gerardino

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

InAs quantum dots emitting at 1.3 Jµm and located inside a photonic crystal membrane nanocavity are studied by electrical pumping. An increase of the recombination rate is observed for quantum dots in resonance with the cavity mode.
Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
Place of PublicationVersailles
PublisherInstitute of Electrical and Electronics Engineers
Pages4703072-1/2
ISBN (Print)9781424422593
DOIs
Publication statusPublished - 2008
Event20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, France
Duration: 25 May 200829 May 2008
Conference number: 20

Conference

Conference20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)
Abbreviated titleIPRM 2008
CountryFrance
CityVersailles
Period25/05/0829/05/08
OtherInternational Conference on Indium Phosphide and Related Materials, IPRM 2008

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