Enhancement of p-GaN conductivity using PECVD SiOx

F. Karouta, M.J. Kappers, M.C.J.C.M. Krämer, B. Jacobs

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
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Abstract

A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained.
Original languageEnglish
Pages (from-to)170-171
Number of pages2
JournalElectrochemical and Solid-State Letters
Volume8
Issue number7
DOIs
Publication statusPublished - 2005

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