Enhancement of p-GaN conductivity using PECVD SiOx

F. Karouta; M.J. Kappers; M.C.J.C.M. Krämer; B. Jacobs

doi:10.1149/1.1922874#

Enhancement of p-GaN conductivity using PECVD SiOx

F. Karouta, M.J. Kappers, M.C.J.C.M. Krämer, B. Jacobs

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Abstract

A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained.

Original language	English
Pages (from-to)	170-171
Number of pages	2
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	7
DOIs	https://doi.org/10.1149/1.1922874# https://doi.org/10.1149/1.1922874
Publication status	Published - 2005

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abstract = "A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained.",

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T1 - Enhancement of p-GaN conductivity using PECVD SiOx

AU - Karouta, F.

AU - Kappers, M.J.

AU - Krämer, M.C.J.C.M.

AU - Jacobs, B.

PY - 2005

Y1 - 2005

N2 - A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained.

AB - A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained.

U2 - 10.1149/1.1922874#

DO - 10.1149/1.1922874#

M3 - Article

SN - 1099-0062

VL - 8

SP - 170

EP - 171

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Enhancement of p-GaN conductivity using PECVD SiOx

Abstract

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