Abstract
A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained.
Original language | English |
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Pages (from-to) | 170-171 |
Number of pages | 2 |
Journal | Electrochemical and Solid-State Letters |
Volume | 8 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2005 |