Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes. First, the efficiency of the electron-phonon interaction in an individual quantum dot is enhanced in small dots. Second, we find that the ratio between intensities of the zero-phonon line and one-phonon line in the photoluminescence spectrum is efficiently controlled both by the shape and the size distribution of those quantum dots.