TY - JOUR
T1 - Enhanced lithographic resolution using longitudinal polarization state of light
AU - Van, My Phung
AU - Ushakova, Katsiaryna
AU - Bastiaansen, Cees
AU - Pereira, S.F.
AU - Urbach, H.P.
AU - Broer, Dick
PY - 2015
Y1 - 2015
N2 - Laser direct-writing is an important technique for the fabrication of complex patterns. There is a continuous need for structures with increasingly small features, i.e., enhanced resolution. Focused radially polarized light is known to exhibit a narrow longitudinal polarization component. Here, a proof-of-concept is shown of enhanced resolution through polarization-selectivity by the selective recording of the longitudinal polarization component in a polarization-selective homeotropic and smectic B photoresist. The full-width-at-half-maximum (FWHM) of the fabricated spots in the polarization-selective resist is up to 56% smaller compared to the FWHM of the same spot in a photoresist that is not polarization-selective, which supports simulations that predict a theoretical maximum reduction of 62%.
AB - Laser direct-writing is an important technique for the fabrication of complex patterns. There is a continuous need for structures with increasingly small features, i.e., enhanced resolution. Focused radially polarized light is known to exhibit a narrow longitudinal polarization component. Here, a proof-of-concept is shown of enhanced resolution through polarization-selectivity by the selective recording of the longitudinal polarization component in a polarization-selective homeotropic and smectic B photoresist. The full-width-at-half-maximum (FWHM) of the fabricated spots in the polarization-selective resist is up to 56% smaller compared to the FWHM of the same spot in a photoresist that is not polarization-selective, which supports simulations that predict a theoretical maximum reduction of 62%.
U2 - 10.1117/1.JMM.14.4.043509
DO - 10.1117/1.JMM.14.4.043509
M3 - Article
SN - 1932-5134
VL - 14
JO - Journal of Micro/Nanolithography, MEMS and MOEMS
JF - Journal of Micro/Nanolithography, MEMS and MOEMS
IS - 4
M1 - 043509
ER -