Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces

Mohamed S. Abdelkhalik; Aleksandr Vaskin; Aimi Abass; Toni López; Jaime Gómez Rivas

doi:10.1117/12.2654623

Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces

Mohamed S. Abdelkhalik
, Aleksandr Vaskin
, Aimi Abass
, Toni López
, Jaime Gómez Rivas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

53 Downloads (Pure)

Abstract

The control of light emission from InGaN quantum wells (QWs) is crucial for improving the performance of LEDs in various applications. Resonant plasmonic nanostructures were demonstrated to affect the properties of coupled emitters significantly. Here, we fabricate Al nanodisks on top of a GaN/sapphire wafer to control the angular far-field emission and enhance the collected light. This far-field photoluminescence (PL) emission is characterized by Fourier-imaging microscopy. Furthermore, we study the relationship between the PL and the pumping laser power, which is required to obtain enhancement in the collected light. The collection enhancement is up to a factor 3.2.

Original language	English
Title of host publication	Photonic and Phononic Properties of Engineered Nanostructures XIII
Editors	Ali Adibi, Shawn-Yu Lin, Axel Scherer
Publisher	SPIE
Number of pages	3
ISBN (Electronic)	9781510659681
ISBN (Print)	9781510659674
DOIs	https://doi.org/10.1117/12.2654623
Publication status	Published - 15 Mar 2023
Event	Photonic and Phononic Properties of Engineered Nanostructures XIII 2023 - San Francisco, United States Duration: 30 Jan 2023 → 2 Feb 2023

Publication series

Name	Proceedings of SPIE
Volume	12431
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Photonic and Phononic Properties of Engineered Nanostructures XIII 2023
Country/Territory	United States
City	San Francisco
Period	30/01/23 → 2/02/23

Funding

This work has been financially supported by the Nederlandse Organisatie voor Wetenschappelijk (NWO), domain Applied and Engineering Sciences (TTW), through grant no 17100 (NanoLEDs).

Funders	Funder number
Nederlandse Organisatie voor Wetenschappelijk Onderzoek	17100

Keywords

Collection light enhancement
Fourier-imaging microscopy
LEDs
Plasmonics

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10.1117/12.2654623

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Abdelkhalik, M. S., Vaskin, A., Abass, A., López, T., & Rivas, J. G. (2023). Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces. In A. Adibi, S.-Y. Lin, & A. Scherer (Eds.), Photonic and Phononic Properties of Engineered Nanostructures XIII Article 124310H (Proceedings of SPIE; Vol. 12431). SPIE. https://doi.org/10.1117/12.2654623

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title = "Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces",

abstract = "The control of light emission from InGaN quantum wells (QWs) is crucial for improving the performance of LEDs in various applications. Resonant plasmonic nanostructures were demonstrated to affect the properties of coupled emitters significantly. Here, we fabricate Al nanodisks on top of a GaN/sapphire wafer to control the angular far-field emission and enhance the collected light. This far-field photoluminescence (PL) emission is characterized by Fourier-imaging microscopy. Furthermore, we study the relationship between the PL and the pumping laser power, which is required to obtain enhancement in the collected light. The collection enhancement is up to a factor 3.2.",

keywords = "Collection light enhancement, Fourier-imaging microscopy, LEDs, Plasmonics",

author = "Abdelkhalik, \{Mohamed S.\} and Aleksandr Vaskin and Aimi Abass and Toni L{\'o}pez and Rivas, \{Jaime G{\'o}mez\}",

year = "2023",

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doi = "10.1117/12.2654623",

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booktitle = "Photonic and Phononic Properties of Engineered Nanostructures XIII",

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note = "Photonic and Phononic Properties of Engineered Nanostructures XIII 2023 ; Conference date: 30-01-2023 Through 02-02-2023",

}

Abdelkhalik, MS, Vaskin, A, Abass, A, López, T & Rivas, JG 2023, Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces. in A Adibi, S-Y Lin & A Scherer (eds), Photonic and Phononic Properties of Engineered Nanostructures XIII., 124310H, Proceedings of SPIE, vol. 12431, SPIE, Photonic and Phononic Properties of Engineered Nanostructures XIII 2023, San Francisco, United States, 30/01/23. https://doi.org/10.1117/12.2654623

Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces. / Abdelkhalik, Mohamed S.; Vaskin, Aleksandr; Abass, Aimi et al.
Photonic and Phononic Properties of Engineered Nanostructures XIII. ed. / Ali Adibi; Shawn-Yu Lin; Axel Scherer. SPIE, 2023. 124310H (Proceedings of SPIE; Vol. 12431).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces

AU - Abdelkhalik, Mohamed S.

AU - Vaskin, Aleksandr

AU - Abass, Aimi

AU - López, Toni

AU - Rivas, Jaime Gómez

PY - 2023/3/15

Y1 - 2023/3/15

N2 - The control of light emission from InGaN quantum wells (QWs) is crucial for improving the performance of LEDs in various applications. Resonant plasmonic nanostructures were demonstrated to affect the properties of coupled emitters significantly. Here, we fabricate Al nanodisks on top of a GaN/sapphire wafer to control the angular far-field emission and enhance the collected light. This far-field photoluminescence (PL) emission is characterized by Fourier-imaging microscopy. Furthermore, we study the relationship between the PL and the pumping laser power, which is required to obtain enhancement in the collected light. The collection enhancement is up to a factor 3.2.

AB - The control of light emission from InGaN quantum wells (QWs) is crucial for improving the performance of LEDs in various applications. Resonant plasmonic nanostructures were demonstrated to affect the properties of coupled emitters significantly. Here, we fabricate Al nanodisks on top of a GaN/sapphire wafer to control the angular far-field emission and enhance the collected light. This far-field photoluminescence (PL) emission is characterized by Fourier-imaging microscopy. Furthermore, we study the relationship between the PL and the pumping laser power, which is required to obtain enhancement in the collected light. The collection enhancement is up to a factor 3.2.

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KW - Fourier-imaging microscopy

KW - LEDs

KW - Plasmonics

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DO - 10.1117/12.2654623

M3 - Conference contribution

AN - SCOPUS:85159663463

SN - 9781510659674

T3 - Proceedings of SPIE

BT - Photonic and Phononic Properties of Engineered Nanostructures XIII

A2 - Adibi, Ali

A2 - Lin, Shawn-Yu

A2 - Scherer, Axel

PB - SPIE

T2 - Photonic and Phononic Properties of Engineered Nanostructures XIII 2023

Y2 - 30 January 2023 through 2 February 2023

ER -

Enhanced Light emission efficiency from InGaN quantum wells using plasmonic metasurfaces

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