Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals

K.B. Jinesh; J.H. Klootwijk; Y. Lamy; R. Wolters; E. Tois; M. Tuominen; F. Roozeboom; W.F.A. Besling

doi:10.1063/1.3009202

Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals

K.B. Jinesh, J.H. Klootwijk, Y. Lamy, R. Wolters, E. Tois, M. Tuominen, F. Roozeboom, W.F.A. Besling

Plasma & Materials Processing

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Abstract

The deposition of alternating (sub)monolayers of lanthanum oxide (La2O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr1-yOx mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained.

Original language	English
Article number	172904
Pages (from-to)	172904-1/3
Journal	Applied Physics Letters
Volume	93
Issue number	17
DOIs	https://doi.org/10.1063/1.3009202
Publication status	Published - 2008

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title = "Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals",

abstract = "The deposition of alternating (sub)monolayers of lanthanum oxide (La2O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr1-yOx mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained.",

author = "K.B. Jinesh and J.H. Klootwijk and Y. Lamy and R. Wolters and E. Tois and M. Tuominen and F. Roozeboom and W.F.A. Besling",

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doi = "10.1063/1.3009202",

language = "English",

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journal = "Applied Physics Letters",

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AU - Jinesh, K.B.

AU - Klootwijk, J.H.

AU - Lamy, Y.

AU - Wolters, R.

AU - Tois, E.

AU - Tuominen, M.

AU - Roozeboom, F.

AU - Besling, W.F.A.

PY - 2008

Y1 - 2008

N2 - The deposition of alternating (sub)monolayers of lanthanum oxide (La2O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr1-yOx mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained.

AB - The deposition of alternating (sub)monolayers of lanthanum oxide (La2O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr1-yOx mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained.

U2 - 10.1063/1.3009202

DO - 10.1063/1.3009202

M3 - Article

SN - 0003-6951

VL - 93

SP - 172904-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172904

ER -

Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals

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