Enhanced doping efficiency of Al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor

Y. Wu, S.E. Potts, P.M. Hermkens, H.C.M. Knoops, F. Roozeboom, W.M.M. Kessels

Research output: Contribution to journalArticleAcademicpeer-review

50 Citations (Scopus)
5 Downloads (Pure)

Abstract

Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from 10% to almost 60% using dimethylaluminum isopropoxide (DMAI, Al(CH3)2(OiPr)) as an alternative Al precursor instead of the conventionally used trimethylaluminum (TMA, Al(CH3)3). Due to the steric hindrance of the isopropoxyl ligand of the precursor, the Al atoms can be deposited more widely dispersed, which enables higher active-dopant densities and hence a higher conductivity of the Al-doped films.
Original languageEnglish
Pages (from-to)4619-4622
Number of pages4
JournalChemistry of Materials
Volume25
Issue number22
DOIs
Publication statusPublished - 2013

Fingerprint

Atomic layer deposition
Aluminum
Doping (additives)
Ligands
Thin films
Atoms

Cite this

@article{3d4240387acd4cc3b74de137b60786b1,
title = "Enhanced doping efficiency of Al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor",
abstract = "Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from 10{\%} to almost 60{\%} using dimethylaluminum isopropoxide (DMAI, Al(CH3)2(OiPr)) as an alternative Al precursor instead of the conventionally used trimethylaluminum (TMA, Al(CH3)3). Due to the steric hindrance of the isopropoxyl ligand of the precursor, the Al atoms can be deposited more widely dispersed, which enables higher active-dopant densities and hence a higher conductivity of the Al-doped films.",
author = "Y. Wu and S.E. Potts and P.M. Hermkens and H.C.M. Knoops and F. Roozeboom and W.M.M. Kessels",
year = "2013",
doi = "10.1021/cm402974j",
language = "English",
volume = "25",
pages = "4619--4622",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "22",

}

Enhanced doping efficiency of Al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor. / Wu, Y.; Potts, S.E.; Hermkens, P.M.; Knoops, H.C.M.; Roozeboom, F.; Kessels, W.M.M.

In: Chemistry of Materials, Vol. 25, No. 22, 2013, p. 4619-4622.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Enhanced doping efficiency of Al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor

AU - Wu, Y.

AU - Potts, S.E.

AU - Hermkens, P.M.

AU - Knoops, H.C.M.

AU - Roozeboom, F.

AU - Kessels, W.M.M.

PY - 2013

Y1 - 2013

N2 - Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from 10% to almost 60% using dimethylaluminum isopropoxide (DMAI, Al(CH3)2(OiPr)) as an alternative Al precursor instead of the conventionally used trimethylaluminum (TMA, Al(CH3)3). Due to the steric hindrance of the isopropoxyl ligand of the precursor, the Al atoms can be deposited more widely dispersed, which enables higher active-dopant densities and hence a higher conductivity of the Al-doped films.

AB - Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from 10% to almost 60% using dimethylaluminum isopropoxide (DMAI, Al(CH3)2(OiPr)) as an alternative Al precursor instead of the conventionally used trimethylaluminum (TMA, Al(CH3)3). Due to the steric hindrance of the isopropoxyl ligand of the precursor, the Al atoms can be deposited more widely dispersed, which enables higher active-dopant densities and hence a higher conductivity of the Al-doped films.

U2 - 10.1021/cm402974j

DO - 10.1021/cm402974j

M3 - Article

VL - 25

SP - 4619

EP - 4622

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 22

ER -