Engineering tunnel junctions on ballistic semiconductor nanowires

J. Damasco; S.T. Gill; S. Gazibegovic; G. Badawy; E.P.A.M. Bakkers; N. Mason

doi:10.1063/1.5108539

Engineering tunnel junctions on ballistic semiconductor nanowires

J. Damasco
, S.T. Gill (Corresponding author)
, S. Gazibegovic
, G. Badawy
, E.P.A.M. Bakkers
, N. Mason (Corresponding author)

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

136 Downloads (Pure)

Abstract

Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.

Original language	English
Article number	043503
Number of pages	5
Journal	Applied Physics Letters
Volume	115
Issue number	4
DOIs	https://doi.org/10.1063/1.5108539
Publication status	Published - 22 Jul 2019

Funding

S.T.G., J.D., and N.M. were supported by the Office of Naval Research Grant Nos. N0014-16-1-2270 and NSF DMR-1710437. S.G, G.B., and E.P.A.M.B. were partly supported by the European Research Council and The Netherlands Organization for Scientific Research. S.T.G. acknowledges support from an NSF Graduate Research Fellowship. S.T.G., J.D., and N.M. acknowledge the use of the Materials Research Lab Central Facilities at the University of Illinois for all work.

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AU - Mason, N.

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Engineering tunnel junctions on ballistic semiconductor nanowires

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