Engineering tunnel junctions on ballistic semiconductor nanowires

J. Damasco, S.T. Gill (Corresponding author), S. Gazibegovic, G. Badawy, E.P.A.M. Bakkers, N. Mason (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockades. However, creating nanoscale tunnel junctions allows one to directly measure other properties such as the density of states or electronic energy distribution functions. In this paper, we demonstrate how to realize uniform tunnel junctions on InSb nanowires, where the low invasiveness preserves ballistic transport in the nanowires. The utility of the tunnel junctions is demonstrated via measurements using a superconducting tunneling probe, which reveal nonequilibrium properties in the open quantum dot regime of an InSb nanowire. The method for high-quality tunnel junction fabrication on InSb nanowires is applicable to other III-V nanowires and enables characterization of nanowire local density of states.

Original languageEnglish
Article number043503
Number of pages5
JournalApplied Physics Letters
Volume115
Issue number4
DOIs
Publication statusPublished - 22 Jul 2019

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tunnel junctions
ballistics
nanowires
engineering
energy distribution
distribution functions
quantum dots
fabrication
probes
electronics

Cite this

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Engineering tunnel junctions on ballistic semiconductor nanowires. / Damasco, J.; Gill, S.T. (Corresponding author); Gazibegovic, S.; Badawy, G.; Bakkers, E.P.A.M.; Mason, N. (Corresponding author).

In: Applied Physics Letters, Vol. 115, No. 4, 043503, 22.07.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Mason, N.

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