Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures

R. Nötzel; J. Fricke; U. Jahn; M. Ramsteiner; H.-P. Schönherr; K.H. Ploog

Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures

R. Nötzel, J. Fricke, U. Jahn, M. Ramsteiner, H.-P. Schönherr, K.H. Ploog

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany
Place of Publication	Bristol, UK
Publisher	Institute of Physics
Pages	183-186
ISBN (Print)	0750307048
Publication status	Published - 2000

Cite this

Nötzel, R., Fricke, J., Jahn, U., Ramsteiner, M., Schönherr, H-P., & Ploog, K. H. (2000). Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures. In Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany (pp. 183-186). Institute of Physics.

@inproceedings{bc0d30a006e44e9d966f8de09c2ab6b7,

title = "Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures",

author = "R. N{\"o}tzel and J. Fricke and U. Jahn and M. Ramsteiner and H.-P. Sch{\"o}nherr and K.H. Ploog",

year = "2000",

language = "English",

isbn = "0750307048",

pages = "183--186",

booktitle = "Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany",

publisher = "Institute of Physics",

address = "United Kingdom",

}

Nötzel, R, Fricke, J, Jahn, U, Ramsteiner, M, Schönherr, H-P & Ploog, KH 2000, Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures. in Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany. Institute of Physics, Bristol, UK, pp. 183-186.

Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures. / Nötzel, R.; Fricke, J.; Jahn, U. et al.

Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany. Bristol, UK : Institute of Physics, 2000. p. 183-186.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures

AU - Nötzel, R.

AU - Fricke, J.

AU - Jahn, U.

AU - Ramsteiner, M.

AU - Schönherr, H.-P.

AU - Ploog, K.H.

PY - 2000

Y1 - 2000

M3 - Conference contribution

SN - 0750307048

SP - 183

EP - 186

BT - Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany

PB - Institute of Physics

CY - Bristol, UK

ER -

Nötzel R, Fricke J, Jahn U, Ramsteiner M, Schönherr H-P, Ploog KH. Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures. In Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany. Bristol, UK: Institute of Physics. 2000. p. 183-186