Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

Simon Sanders, Andrea Cabrero-Vilatela, Piran R. Kidambi, Jack A. Alexander-Webber, Christ Weijtens, Philipp Braeuninger-Weimer, Adrianus I. Aria, Malik M. Qasim, Timothy D. Wilkinson, John Robertson, Stephan Hofmann, Jens Meyer

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26 Citations (Scopus)

Abstract

Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq−1. Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.
Original languageEnglish
Pages (from-to)13135-13142
Number of pages8
JournalNanoscale
Volume7
Issue number30
DOIs
Publication statusPublished - 2015
Externally publishedYes

Cite this

Sanders, S., Cabrero-Vilatela, A., Kidambi, P. R., Alexander-Webber, J. A., Weijtens, C., Braeuninger-Weimer, P., ... Meyer, J. (2015). Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics. Nanoscale, 7(30), 13135-13142. https://doi.org/10.1039/c5nr03246f