Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

Simon Sanders, Andrea Cabrero-Vilatela, Piran R. Kidambi, Jack A. Alexander-Webber, Christ Weijtens, Philipp Braeuninger-Weimer, Adrianus I. Aria, Malik M. Qasim, Timothy D. Wilkinson, John Robertson, Stephan Hofmann, Jens Meyer

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)

Abstract

Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq−1. Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.
Original languageEnglish
Pages (from-to)13135-13142
Number of pages8
JournalNanoscale
Volume7
Issue number30
DOIs
Publication statusPublished - 2015
Externally publishedYes

Cite this

Sanders, S., Cabrero-Vilatela, A., Kidambi, P. R., Alexander-Webber, J. A., Weijtens, C., Braeuninger-Weimer, P., ... Meyer, J. (2015). Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics. Nanoscale, 7(30), 13135-13142. https://doi.org/10.1039/c5nr03246f
Sanders, Simon ; Cabrero-Vilatela, Andrea ; Kidambi, Piran R. ; Alexander-Webber, Jack A. ; Weijtens, Christ ; Braeuninger-Weimer, Philipp ; Aria, Adrianus I. ; Qasim, Malik M. ; Wilkinson, Timothy D. ; Robertson, John ; Hofmann, Stephan ; Meyer, Jens. / Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics. In: Nanoscale. 2015 ; Vol. 7, No. 30. pp. 13135-13142.
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abstract = "Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90{\%} reduction in its sheet resistance to ∼250 Ohm sq−1. Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.",
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Sanders, S, Cabrero-Vilatela, A, Kidambi, PR, Alexander-Webber, JA, Weijtens, C, Braeuninger-Weimer, P, Aria, AI, Qasim, MM, Wilkinson, TD, Robertson, J, Hofmann, S & Meyer, J 2015, 'Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics', Nanoscale, vol. 7, no. 30, pp. 13135-13142. https://doi.org/10.1039/c5nr03246f

Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics. / Sanders, Simon; Cabrero-Vilatela, Andrea; Kidambi, Piran R.; Alexander-Webber, Jack A.; Weijtens, Christ; Braeuninger-Weimer, Philipp; Aria, Adrianus I.; Qasim, Malik M.; Wilkinson, Timothy D.; Robertson, John; Hofmann, Stephan; Meyer, Jens.

In: Nanoscale, Vol. 7, No. 30, 2015, p. 13135-13142.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Sanders, Simon

AU - Cabrero-Vilatela, Andrea

AU - Kidambi, Piran R.

AU - Alexander-Webber, Jack A.

AU - Weijtens, Christ

AU - Braeuninger-Weimer, Philipp

AU - Aria, Adrianus I.

AU - Qasim, Malik M.

AU - Wilkinson, Timothy D.

AU - Robertson, John

AU - Hofmann, Stephan

AU - Meyer, Jens

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AB - Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq−1. Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.

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Sanders S, Cabrero-Vilatela A, Kidambi PR, Alexander-Webber JA, Weijtens C, Braeuninger-Weimer P et al. Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics. Nanoscale. 2015;7(30):13135-13142. https://doi.org/10.1039/c5nr03246f