Energy relaxation of lower-dimensional hot carriers studied with picosecond photoluminescence

R.W.J. Hollering, T.T.J.M. Berendschot, H.J.A. Bluyssen, H.A.J.M. Reinen, P. Wyder, F. Roozeboom

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Abstract

To study the energy relaxation of lower-dimensional hot carriers, picosecond time- and energy-resolved photoluminescence measurements have been carried out on bulk GaAs and GaAs/AlxGa1-xAs quantum-well structures in the presence of magnetic fields up to B=20 T. For GaAs the results show that the energy-relaxation rate reduces with increasing strength of the magnetic field. This cooling behavior is adequately described by a model for energy relaxation containing the magnetic-field-dependent kinetics of the coupled carrier nonequilibrium-LO-phonon system. For the quantum-well structures, an increasing magnetic field normal to the quasi-two-dimensional layers reduces the carrier cooling up to B=8 T, while at higher field strengths an enhancement in cooling is observed up to B=20 T. We suggest this effect to be due to a reduction in energy relaxation rate by LO-phonon emission, so that at B>8 T carrier cooling is taken over by acoustic-phonon emission, which increases with magnetic field.

Original languageEnglish
Pages (from-to)13323-13334
Number of pages12
JournalPhysical Review B
Volume38
Issue number18
DOIs
Publication statusPublished - 1 Jan 1988
Externally publishedYes

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