Energy influx from an rf plasma to a substrate during plasma processing

H. Kersten, E. Stoffels - Adamowicz, W.W. Stoffels, M. Otte, C. Csambal, H. Deutsch, R. Hippler

Research output: Contribution to journalArticleAcademicpeer-review

69 Citations (Scopus)
104 Downloads (Pure)

Abstract

The energy influx delivered by an rf plasma to a metal substrate has been studied by a calorimetric method with a thermal probe. By changing the substrate voltage, the influence of the kinetic energy of the charge carriers to the thermal power could be determined. The measured energy influx for an argon plasma can be explained mainly by ions, electrons, and their recombination. In the case of an oxygen plasma, where the energy influx is under comparable conditions about 50% higher, also other transfer mechanisms such as surface-aided atom association and relaxation of rovibrational states have to be taken into consideration.
Original languageEnglish
Pages (from-to)3637-3645
JournalJournal of Applied Physics
Volume87
Issue number8
DOIs
Publication statusPublished - 2000

Fingerprint Dive into the research topics of 'Energy influx from an rf plasma to a substrate during plasma processing'. Together they form a unique fingerprint.

  • Cite this

    Kersten, H., Stoffels - Adamowicz, E., Stoffels, W. W., Otte, M., Csambal, C., Deutsch, H., & Hippler, R. (2000). Energy influx from an rf plasma to a substrate during plasma processing. Journal of Applied Physics, 87(8), 3637-3645. https://doi.org/10.1063/1.372393