Energy-efficient writing scheme for magnetic domain-wall motion memory

K.J. Kim, Y. Yoshimura, W.S. Ham, R.J.G. Ernst, Y. Hirata, T. Li, S. Kim, T. Moriyama, Y. Nakatani, T. Ono

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)


We present an energy-efficient magnetic domain-writing scheme for domain wall (DW) motion-based memory devices. A cross-shaped nanowire is employed to inject a domain into the nanowire through current-induced DW propagation. The energy required for injecting the magnetic domain is more than one order of magnitude lower than that for the conventional field-based writing scheme. The proposed scheme is beneficial for device miniaturization because the threshold current for DW propagation scales with the device size, which cannot be achieved in the conventional field-based technique.

Original languageEnglish
Article number043002
Number of pages4
JournalApplied Physics Express
Issue number4
Publication statusPublished - 1 Apr 2017

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