Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

V. Haxha, R. Garg, M.A. Migliorato, I.W.D. Drouzas, J.M. Ulloa Herrero, P.M. Koenraad, M.J. Steer, H.Y. Liu, M.J. Hopkinson, D.J. Mowbray

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Abstract

In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.
Original languageEnglish
Pages (from-to)533-536
Number of pages4
JournalMicroelectronics Journal
Volume40
Issue number3
DOIs
Publication statusPublished - 2009

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