Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

V. Haxha; R. Garg; M.A. Migliorato; I.W.D. Drouzas; J.M. Ulloa Herrero; P.M. Koenraad; M.J. Steer; H.Y. Liu; M.J. Hopkinson; D.J. Mowbray

doi:10.1016/j.mejo.2008.06.051

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

V. Haxha, R. Garg, M.A. Migliorato, I.W.D. Drouzas, J.M. Ulloa Herrero, P.M. Koenraad, M.J. Steer, H.Y. Liu, M.J. Hopkinson, D.J. Mowbray

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Abstract

In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.

Original language	English
Pages (from-to)	533-536
Number of pages	4
Journal	Microelectronics Journal
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/j.mejo.2008.06.051
Publication status	Published - 2009

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title = "Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers",

abstract = "In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.",

author = "V. Haxha and R. Garg and M.A. Migliorato and I.W.D. Drouzas and {Ulloa Herrero}, J.M. and P.M. Koenraad and M.J. Steer and H.Y. Liu and M.J. Hopkinson and D.J. Mowbray",

year = "2009",

doi = "10.1016/j.mejo.2008.06.051",

language = "English",

volume = "40",

pages = "533--536",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

AU - Haxha, V.

AU - Garg, R.

AU - Migliorato, M.A.

AU - Drouzas, I.W.D.

AU - Ulloa Herrero, J.M.

AU - Koenraad, P.M.

AU - Steer, M.J.

AU - Liu, H.Y.

AU - Hopkinson, M.J.

AU - Mowbray, D.J.

PY - 2009

Y1 - 2009

N2 - In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.

AB - In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents and that the theoretical behaviour appears to be substantiated by experimental evidence of growth of InAs self-assembled quantum dots capped by GaSbAs.

U2 - 10.1016/j.mejo.2008.06.051

DO - 10.1016/j.mejo.2008.06.051

M3 - Article

SN - 0026-2692

VL - 40

SP - 533

EP - 536

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

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