Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

J.H. Blokland; M. Bozkurt; J.M. Ulloa Herrero; D. Reuter; A.D. Wieck; P.M. Koenraad; P.C.M. Christianen; J.C. Maan

doi:10.1063/1.3072366

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

J.H. Blokland, M. Bozkurt, J.M. Ulloa Herrero, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan

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Abstract

We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots.

Original language	English
Article number	023107
Pages (from-to)	023107-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.3072366
Publication status	Published - 2009

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@article{9eb53a328e16480b884d886473cc64b1,

title = "Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy",

abstract = "We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots.",

author = "J.H. Blokland and M. Bozkurt and {Ulloa Herrero}, J.M. and D. Reuter and A.D. Wieck and P.M. Koenraad and P.C.M. Christianen and J.C. Maan",

year = "2009",

doi = "10.1063/1.3072366",

language = "English",

volume = "94",

pages = "023107--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

AU - Blokland, J.H.

AU - Bozkurt, M.

AU - Ulloa Herrero, J.M.

AU - Reuter, D.

AU - Wieck, A.D.

AU - Koenraad, P.M.

AU - Christianen, P.C.M.

AU - Maan, J.C.

PY - 2009

Y1 - 2009

N2 - We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots.

AB - We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots.

U2 - 10.1063/1.3072366

DO - 10.1063/1.3072366

M3 - Article

SN - 0003-6951

VL - 94

SP - 023107-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023107

ER -

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

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