Electrorefraction in strained InGaAs/InP chopped quantum wells : significance of the interface layers

B.H.P. Dorren; A. Silov; M.R. Leijs; J.E.M. Haverkort; J.H. Wolter

doi:10.1063/1.372183

Electrorefraction in strained InGaAs/InP chopped quantum wells : significance of the interface layers

B.H.P. Dorren, A. Silov, M.R. Leijs, J.E.M. Haverkort, J.H. Wolter

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Abstract

We present a model for electrorefraction based on the quantum confined Stark effect (QCSE) in strained InGaAs/InP chopped quantum wells (CQWs) consisting of three 27 Å InGaAs wells separated by 15 Å InP barriers. The model fully takes into account the influence of the thin interface layers around each well. We experimentally verify the model on a InGaAs/InP CQW which combines a large 60 meV QCSE redshift at 11.7 V bias with waveguide transparency at 1.55 µm, which is two times larger than in a InGaAsP quaternary well. The calculated electroabsorption spectra of the CQWs are in good agreement with experiment. We finally applied the Kramers–Kronig transformations for calculating the switching voltage in a Mach–Zehnder switch employing CQWs in the phase shifting section. The model was found to be in good agreement with experiment for both polarizations.

Original language	English
Pages (from-to)	2331-2335
Journal	Journal of Applied Physics
Volume	87
Issue number	5
DOIs	https://doi.org/10.1063/1.372183
Publication status	Published - 2000

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title = "Electrorefraction in strained InGaAs/InP chopped quantum wells : significance of the interface layers",

abstract = "We present a model for electrorefraction based on the quantum confined Stark effect (QCSE) in strained InGaAs/InP chopped quantum wells (CQWs) consisting of three 27 {\AA} InGaAs wells separated by 15 {\AA} InP barriers. The model fully takes into account the influence of the thin interface layers around each well. We experimentally verify the model on a InGaAs/InP CQW which combines a large 60 meV QCSE redshift at 11.7 V bias with waveguide transparency at 1.55 µm, which is two times larger than in a InGaAsP quaternary well. The calculated electroabsorption spectra of the CQWs are in good agreement with experiment. We finally applied the Kramers–Kronig transformations for calculating the switching voltage in a Mach–Zehnder switch employing CQWs in the phase shifting section. The model was found to be in good agreement with experiment for both polarizations.",

author = "B.H.P. Dorren and A. Silov and M.R. Leijs and J.E.M. Haverkort and J.H. Wolter",

year = "2000",

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language = "English",

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T1 - Electrorefraction in strained InGaAs/InP chopped quantum wells : significance of the interface layers

AU - Dorren, B.H.P.

AU - Silov, A.

AU - Leijs, M.R.

AU - Haverkort, J.E.M.

AU - Wolter, J.H.

PY - 2000

Y1 - 2000

N2 - We present a model for electrorefraction based on the quantum confined Stark effect (QCSE) in strained InGaAs/InP chopped quantum wells (CQWs) consisting of three 27 Å InGaAs wells separated by 15 Å InP barriers. The model fully takes into account the influence of the thin interface layers around each well. We experimentally verify the model on a InGaAs/InP CQW which combines a large 60 meV QCSE redshift at 11.7 V bias with waveguide transparency at 1.55 µm, which is two times larger than in a InGaAsP quaternary well. The calculated electroabsorption spectra of the CQWs are in good agreement with experiment. We finally applied the Kramers–Kronig transformations for calculating the switching voltage in a Mach–Zehnder switch employing CQWs in the phase shifting section. The model was found to be in good agreement with experiment for both polarizations.

AB - We present a model for electrorefraction based on the quantum confined Stark effect (QCSE) in strained InGaAs/InP chopped quantum wells (CQWs) consisting of three 27 Å InGaAs wells separated by 15 Å InP barriers. The model fully takes into account the influence of the thin interface layers around each well. We experimentally verify the model on a InGaAs/InP CQW which combines a large 60 meV QCSE redshift at 11.7 V bias with waveguide transparency at 1.55 µm, which is two times larger than in a InGaAsP quaternary well. The calculated electroabsorption spectra of the CQWs are in good agreement with experiment. We finally applied the Kramers–Kronig transformations for calculating the switching voltage in a Mach–Zehnder switch employing CQWs in the phase shifting section. The model was found to be in good agreement with experiment for both polarizations.

U2 - 10.1063/1.372183

DO - 10.1063/1.372183

M3 - Article

SN - 0021-8979

VL - 87

SP - 2331

EP - 2335

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Electrorefraction in strained InGaAs/InP chopped quantum wells : significance of the interface layers

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