Electrorefraction in quantum dots: dependence on lateral size and shape

R. Prasanth, J.E.M. Haverkort, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Photonic switches require low loss polarization independent phase shifting elements. In a composite quantum well, a 0.46 mm phase shifter provides a p/4 phase shift by combining the Quantum Confined Stark Effect (QCSE) and carrier depletion effect. We investigate whether the discrete energy levels and the high peak absorption in quantum dots (QDs) provide an opportunity for increasing the electro-refraction. The electro-refraction in strained cylindrical InAs/GaAs QDs is explored using a numerical model based on the 4×4 Luttinger-Kohn Hamiltonian. The excitonic states are calculated by matrix diagonalization with plane-wave basis states. We observe that the QCSE sharply increases with the height of the QD and is also optimized for small radius QDs. The QCSE in pyramidal QDs is considerably larger than in squares or cylinders. We finally present large electro-refraction in, cone shaped pyramidal QDs.
Original languageEnglish
Title of host publicationNanotechnology 2003, IEEE-Nano 2003 3rd IEEE Conf., August 12-14 2003 San Francisco, U.S.A.
Place of PublicationSan Francisco, U.S.A.
PublisherInstitute of Electrical and Electronics Engineers
Pages126-129
ISBN (Print)0-7803-7976-4
DOIs
Publication statusPublished - 2003
Eventconference; Nanotechnology 2003, IEEE-Nano 2003, 3rd IEEE Conf. San Francisco, U.S.A.; 2003-08-12; 2003-08-14 -
Duration: 12 Aug 200314 Aug 2003

Publication series

NameProceedings of the IEEE
Volume1
ISSN (Print)0018-9219

Conference

Conferenceconference; Nanotechnology 2003, IEEE-Nano 2003, 3rd IEEE Conf. San Francisco, U.S.A.; 2003-08-12; 2003-08-14
Period12/08/0314/08/03
OtherNanotechnology 2003, IEEE-Nano 2003, 3rd IEEE Conf. San Francisco, U.S.A.

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