Electronic memory effects in diodes of zinc oxide nanoparticles in a matrix of polystyrene or poly(3-hexylthiophene)

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Abstract

Electronic memory effects in metal-insulator-metal devices with aluminum and poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) as electrodes and a soln. processed active layer consisting of zinc oxide (ZnO) nanoparticles embedded in a matrix of poly(3-hexylthiophene) or polystyrene are investigated. After an initial forming process, the devices show a reversible change in cond. The forming process itself is interpreted in terms of desorption of mol. oxygen from the ZnO nanoparticle surface, induced by injection of holes via the PEDOT:PSS contact, leading to a higher n-type cond. via interparticle ZnO contacts. The forming can also be induced with UV light and the process is studied with ESR, photoinduced absorption spectroscopy, and field effect measurements. Also, the compn. of the active layer is varied and the memory effects can by influenced by changing the ZnO content and the polymer, allowing for data storage with lifetime Deg14 h. [on SciFinder (R)]
Original languageEnglish
Article number083701
Pages (from-to)083701-1/9
Number of pages9
JournalJournal of Applied Physics
Volume102
Issue number8
DOIs
Publication statusPublished - 2007

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