@inproceedings{cef6b743ef7249dc8473e44ec59047b6,
title = "Electron probe microanalysis of silicon implanted with oxygen and nitrogen",
abstract = "A technique is demonstrated to establish concentration profiles of ion-implanted specimens. By measuring with an electron probe microanalyzer the X-ray intensity ratios of all the elements present in a sample and the use of a multi layer analysis program profil es with a maximum depth of 1 µm can be determined. Several examples are shown of a silicon substrate implanted with nitrogen, sometimes combined with an oxygen implantation. The Monte Carlo technique has been used to verify the results.",
author = "J.M. Dijkstra and G.F. Bastin and H.J.M. Heijligers and N. Ammann and P. Karduck",
year = "1992",
language = "English",
series = "Beitr{\"a}ge Elektronenmikroskopische Direktabbildung und Analyse von Oberfl{\"a}chen",
pages = "141--146",
booktitle = "Proceedings of the 25. Kolloqium des Arbeitskreises f{\"u}r Elektronenmikroskopische Direktabbildung und Analyse von Oberfl{\"a}chen (EDO) 5.-8. Oktober 1992 Koningshof, Veldhoven / Niederlande",
}