Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

T. Story, C.H.W. Swüste, P.J.T. Eggenkamp, H.J.M. Swagten, W.J.M. Jonge, de

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Abstract

The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.
Original languageEnglish
Pages (from-to)2802-2805
Number of pages4
JournalPhysical Review Letters
Volume77
Issue number13
DOIs
Publication statusPublished - 1996

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