Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

T. Story; C.H.W. Swüste; P.J.T. Eggenkamp; H.J.M. Swagten; W.J.M. Jonge, de

doi:10.1103/PhysRevLett.77.2802

Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

T. Story, C.H.W. Swüste, P.J.T. Eggenkamp, H.J.M. Swagten, W.J.M. Jonge, de

Physics of Nanostructures

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.

Original language	English
Pages (from-to)	2802-2805
Number of pages	4
Journal	Physical Review Letters
Volume	77
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.77.2802
Publication status	Published - 1996

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abstract = "The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.",

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