Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

T. Story; C.H.W. Swüste; P.J.T. Eggenkamp; H.J.M. Swagten; W.J.M. Jonge, de

doi:10.1103/PhysRevLett.77.2802

Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

T. Story, C.H.W. Swüste, P.J.T. Eggenkamp, H.J.M. Swagten, W.J.M. Jonge, de

Physics of Nanostructures

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Abstract

The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.

Original language	English
Pages (from-to)	2802-2805
Number of pages	4
Journal	Physical Review Letters
Volume	77
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.77.2802
Publication status	Published - 1996

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@article{9acf1d65f88b4b9589bbc2282d27e38c,

title = "Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors",

abstract = "The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.",

author = "T. Story and C.H.W. Sw{\"u}ste and P.J.T. Eggenkamp and H.J.M. Swagten and {Jonge, de}, W.J.M.",

year = "1996",

doi = "10.1103/PhysRevLett.77.2802",

language = "English",

volume = "77",

pages = "2802--2805",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "13",

}

TY - JOUR

T1 - Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

AU - Story, T.

AU - Swüste, C.H.W.

AU - Eggenkamp, P.J.T.

AU - Swagten, H.J.M.

AU - Jonge, de, W.J.M.

PY - 1996

Y1 - 1996

N2 - The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.

AB - The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.

U2 - 10.1103/PhysRevLett.77.2802

DO - 10.1103/PhysRevLett.77.2802

M3 - Article

C2 - 10062049

VL - 77

SP - 2802

EP - 2805

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 13

ER -

Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

Abstract

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