Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors

T. Story, C.H.W. Swüste, P.J.T. Eggenkamp, H.J.M. Swagten, W.J.M. Jonge, de

Research output: Contribution to journalArticleAcademicpeer-review

55 Citations (Scopus)
291 Downloads (Pure)


The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier–local moment exchange integrals for holes and electrons in PbTe, as well as for light and heavy holes in SnTe.
Original languageEnglish
Pages (from-to)2802-2805
Number of pages4
JournalPhysical Review Letters
Issue number13
Publication statusPublished - 1996


Dive into the research topics of 'Electron paramagnetic resonance knight shift in semimagnetic (diluted magnetic) semiconductors'. Together they form a unique fingerprint.

Cite this