Electron mobility in Si delta doped GaAs

P. M. Koenraad; A.F.W. van de Stadt; J. M. Shi; G. Q. Hai; N. Studart; P. Vansant; F. M. Peeters; J. T. Devreese; J.A.A.J. Perenboom; J. H. Wolter

doi:10.1016/0921-4526(94)01094-H

Electron mobility in Si delta doped GaAs

P. M. Koenraad, A.F.W. van de Stadt, J. M. Shi, G. Q. Hai, N. Studart, P. Vansant, F. M. Peeters, J. T. Devreese, J.A.A.J. Perenboom, J. H. Wolter

Applied Physics and Science Education

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Abstract

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

Original language	English
Pages (from-to)	462-465
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	211
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(94)01094-H
Publication status	Published - 1 May 1995

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title = "Electron mobility in Si delta doped GaAs",

abstract = "We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.",

author = "Koenraad, {P. M.} and {van de Stadt}, A.F.W. and Shi, {J. M.} and Hai, {G. Q.} and N. Studart and P. Vansant and Peeters, {F. M.} and Devreese, {J. T.} and J.A.A.J. Perenboom and Wolter, {J. H.}",

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T1 - Electron mobility in Si delta doped GaAs

AU - Koenraad, P. M.

AU - van de Stadt, A.F.W.

AU - Shi, J. M.

AU - Hai, G. Q.

AU - Studart, N.

AU - Vansant, P.

AU - Peeters, F. M.

AU - Devreese, J. T.

AU - Perenboom, J.A.A.J.

AU - Wolter, J. H.

PY - 1995/5/1

Y1 - 1995/5/1

N2 - We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

AB - We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

UR - http://www.scopus.com/inward/record.url?scp=58149324594&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(94)01094-H

DO - 10.1016/0921-4526(94)01094-H

M3 - Article

AN - SCOPUS:58149324594

SN - 0921-4526

VL - 211

SP - 462

EP - 465

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Electron mobility in Si delta doped GaAs

Abstract

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