Electron mobility in Si delta doped GaAs

P. M. Koenraad, A.F.W. van de Stadt, J. M. Shi, G. Q. Hai, N. Studart, P. Vansant, F. M. Peeters, J. T. Devreese, J.A.A.J. Perenboom, J. H. Wolter

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Abstract

We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

Original languageEnglish
Pages (from-to)462-465
Number of pages4
JournalPhysica B: Physics of Condensed Matter
Volume211
Issue number1-4
DOIs
Publication statusPublished - 1 May 1995

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