Electron mobility in Si delta doped GaAs

P. M. Koenraad, A.F.W. van de Stadt, J. M. Shi, G. Q. Hai, N. Studart, P. Vansant, F. M. Peeters, J. T. Devreese, J.A.A.J. Perenboom, J. H. Wolter

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)


We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

Original languageEnglish
Pages (from-to)462-465
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - 1 May 1995


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