Electron microscopy study of advanced heterostructures for optoelectronics

J. Katcki; J. Ratajczak; F. Phillipp; J. Muszalski; M. Bugajski; J.X. Chen; A. Fiore

doi:10.1016/S0254-0584(02)00560-6

Electron microscopy study of advanced heterostructures for optoelectronics

J. Katcki
, J. Ratajczak
, F. Phillipp
, J. Muszalski
, M. Bugajski
, J.X. Chen
, A. Fiore

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]

Original language	English
Pages (from-to)	244-248
Journal	Materials Chemistry and Physics
Volume	81
Issue number	2-3
DOIs	https://doi.org/10.1016/S0254-0584(02)00560-6
Publication status	Published - 2003

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title = "Electron microscopy study of advanced heterostructures for optoelectronics",

abstract = "The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]",

author = "J. Katcki and J. Ratajczak and F. Phillipp and J. Muszalski and M. Bugajski and J.X. Chen and A. Fiore",

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T1 - Electron microscopy study of advanced heterostructures for optoelectronics

AU - Katcki, J.

AU - Ratajczak, J.

AU - Phillipp, F.

AU - Muszalski, J.

AU - Bugajski, M.

AU - Chen, J.X.

AU - Fiore, A.

PY - 2003

Y1 - 2003

N2 - The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]

AB - The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]

U2 - 10.1016/S0254-0584(02)00560-6

DO - 10.1016/S0254-0584(02)00560-6

M3 - Article

SN - 0254-0584

VL - 81

SP - 244

EP - 248

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Electron microscopy study of advanced heterostructures for optoelectronics

Abstract

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