Electron microscopy study of advanced heterostructures for optoelectronics

J. Katcki, J. Ratajczak, F. Phillipp, J. Muszalski, M. Bugajski, J.X. Chen, A. Fiore

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)244-248
JournalMaterials Chemistry and Physics
Volume81
Issue number2-3
DOIs
Publication statusPublished - 2003

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    Katcki, J., Ratajczak, J., Phillipp, F., Muszalski, J., Bugajski, M., Chen, J. X., & Fiore, A. (2003). Electron microscopy study of advanced heterostructures for optoelectronics. Materials Chemistry and Physics, 81(2-3), 244-248. https://doi.org/10.1016/S0254-0584(02)00560-6