TY - JOUR
T1 - Electron microscopy study of advanced heterostructures for optoelectronics
AU - Katcki, J.
AU - Ratajczak, J.
AU - Phillipp, F.
AU - Muszalski, J.
AU - Bugajski, M.
AU - Chen, J.X.
AU - Fiore, A.
PY - 2003
Y1 - 2003
N2 - The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]
AB - The application of cross-sectional transmission electron microscopy and SEM to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as elec. contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed. [on SciFinder (R)]
U2 - 10.1016/S0254-0584(02)00560-6
DO - 10.1016/S0254-0584(02)00560-6
M3 - Article
SN - 0254-0584
VL - 81
SP - 244
EP - 248
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
IS - 2-3
ER -