Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula

J.J.M. Holst, van der, F.W.A. Oost, van, R. Coehoorn, P.A. Bobbert

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

No abstract
Original languageEnglish
Title of host publicationPhysics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands
EditorsM. Graef, de, G. Zegers, E. Min, F. Pavert, van de
Place of PublicationUtrecht
PublisherStichting FOM
PagesP03.25-
Publication statusPublished - 2010

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Semiconductors
Genetic Recombination
Electrons

Cite this

Holst, van der, J. J. M., Oost, van, F. W. A., Coehoorn, R., & Bobbert, P. A. (2010). Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula. In M. Graef, de, G. Zegers, E. Min, & F. Pavert, van de (Eds.), Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands (pp. P03.25-). Utrecht: Stichting FOM.
Holst, van der, J.J.M. ; Oost, van, F.W.A. ; Coehoorn, R. ; Bobbert, P.A. / Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula. Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands. editor / M. Graef, de ; G. Zegers ; E. Min ; F. Pavert, van de. Utrecht : Stichting FOM, 2010. pp. P03.25-
@inproceedings{c6020c25bd314e78b8a5e078e693d643,
title = "Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula",
abstract = "No abstract",
author = "{Holst, van der}, J.J.M. and {Oost, van}, F.W.A. and R. Coehoorn and P.A. Bobbert",
year = "2010",
language = "English",
pages = "P03.25--",
editor = "{Graef, de}, M. and G. Zegers and E. Min and {Pavert, van de}, F.",
booktitle = "Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands",
publisher = "Stichting FOM",

}

Holst, van der, JJM, Oost, van, FWA, Coehoorn, R & Bobbert, PA 2010, Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula. in M Graef, de, G Zegers, E Min & F Pavert, van de (eds), Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands. Stichting FOM, Utrecht, pp. P03.25-.

Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula. / Holst, van der, J.J.M.; Oost, van, F.W.A.; Coehoorn, R.; Bobbert, P.A.

Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands. ed. / M. Graef, de; G. Zegers; E. Min; F. Pavert, van de. Utrecht : Stichting FOM, 2010. p. P03.25-.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula

AU - Holst, van der, J.J.M.

AU - Oost, van, F.W.A.

AU - Coehoorn, R.

AU - Bobbert, P.A.

PY - 2010

Y1 - 2010

N2 - No abstract

AB - No abstract

M3 - Conference contribution

SP - P03.25-

BT - Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands

A2 - Graef, de, M.

A2 - Zegers, G.

A2 - Min, E.

A2 - Pavert, van de, F.

PB - Stichting FOM

CY - Utrecht

ER -

Holst, van der JJM, Oost, van FWA, Coehoorn R, Bobbert PA. Electron-hole recombination in disordered organic semiconductors : validity of the Langevin formula. In Graef, de M, Zegers G, Min E, Pavert, van de F, editors, Physics@FOM Veldhoven, 19-20 January 2010, Veldhoven, The Netherlands. Utrecht: Stichting FOM. 2010. p. P03.25-