Electron density measurements in a single wafer etch reactor

T.H.J. Bisschops, H. Störi, J.A. Engels, F.J. Hoog, de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

29 Downloads (Pure)

Abstract

By using microwaves, abs. values of electron densities were obtained in a modified single wafer etch reactor. By using CF4 as the etch gas electron densities were found in the range of 2 * 1014 to 5 * 1016 m-3 at pressures of 5 * 10-2 - 0.5 torr and powers of 5 * 10-2 - 1 W/cm2. The decay time of the electron d. was also measured and is 1.7 - 7 msec. [on SciFinder (R)]
Original languageEnglish
Title of host publicationISPC 7 : international symposium on plasma chemistry : 7th, Eindhoven, July 1-5, 1985, Vol. 2
EditorsC.J. Timmermans
Pages599-604
Publication statusPublished - 1985

Fingerprint Dive into the research topics of 'Electron density measurements in a single wafer etch reactor'. Together they form a unique fingerprint.

Cite this