Electron density in Extreme Ultra-Violet generated plasmas

R.M. Horst, van der, S. Nijdam, J. Beckers, G.M.W. Kroesen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Abstract

The electron density in an Extreme Ultra-Violet generated plasma In order to meet the demand of increasing computer speed and memory capacity, industries are striving to reduce the size of computer chips. This miniaturization can be achieved by reducing the wavelength in lithography machines to Extreme Ultra-Violet (EUV, 92 eV). The low-pressure (around 1 Pa) transparent background gas (e.g. H2 and He) in the lithography machine is partially ionized by the absorption of EUV photons. The study of these low-density (1E15 m-3) pulsed plasmas is interesting and experimentally challenging. In this research the electron density is studied in an EUV-generated plasma in argon. The electron density is measured with microwave cavity resonance spectroscopy (MCRS). In MCRS measurements the resonance frequency in a cavity is determined, this frequency depends on the electron density in the cavity. The first results show a detection limit of 1E14 m-3 and a time-resolution of 16 ns. The electron density is measured as a function of argon pressure and EUV intensity.
Original languageEnglish
Title of host publicationPresentation at the 16th Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP-16), 21-22 November 2013, Kerkrade, The Netherlands
Publication statusPublished - 2013
Event16th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 2013) - Conference centre "Rolduc", Kerkrade, Netherlands
Duration: 21 Nov 201322 Nov 2013
https://www.tue.nl/fileadmin/content/faculteiten/tn/PMP/Research/Conferences___Workshops/WELTPP_16/announcement_2013.pdf

Workshop

Workshop16th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 2013)
Abbreviated titleWELTPP-16
CountryNetherlands
CityKerkrade
Period21/11/1322/11/13
Internet address

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