Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

Mike Ah Sen, Pierpaolo Spinelli, Benjamin Kikkert, Eelko Hoek, Bart Macco, Arthur Weeber, Paula Bronsveld

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

LanguageEnglish
Title of host publicationSiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
PublisherAmerican Institute of Physics
ISBN (Print)9780735417151
DOIs
StatePublished - 10 Aug 2018
EventSiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland
Duration: 19 Mar 201821 Mar 2018

Publication series

NameAIP Conference Proceedings
Volume1999

Conference

ConferenceSiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
CountrySwitzerland
CityLausanne
Period19/03/1821/03/18

Fingerprint

molybdenum oxides
heterojunctions
solar cells
electron beams
annealing
compatibility
passivity
amorphous silicon
wafers
oxides
cells

Cite this

Sen, M. A., Spinelli, P., Kikkert, B., Hoek, E., Macco, B., Weeber, A., & Bronsveld, P. (2018). Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. In SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics [040001] (AIP Conference Proceedings; Vol. 1999). American Institute of Physics. DOI: 10.1063/1.5049264
Sen, Mike Ah ; Spinelli, Pierpaolo ; Kikkert, Benjamin ; Hoek, Eelko ; Macco, Bart ; Weeber, Arthur ; Bronsveld, Paula. / Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. American Institute of Physics, 2018. (AIP Conference Proceedings).
@inproceedings{34d7b0fcf3fa45a3b67208ea6ab864f6,
title = "Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells",
abstract = "Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.",
author = "Sen, {Mike Ah} and Pierpaolo Spinelli and Benjamin Kikkert and Eelko Hoek and Bart Macco and Arthur Weeber and Paula Bronsveld",
year = "2018",
month = "8",
day = "10",
doi = "10.1063/1.5049264",
language = "English",
isbn = "9780735417151",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
booktitle = "SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics",
address = "United States",

}

Sen, MA, Spinelli, P, Kikkert, B, Hoek, E, Macco, B, Weeber, A & Bronsveld, P 2018, Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. in SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics., 040001, AIP Conference Proceedings, vol. 1999, American Institute of Physics, SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics, Lausanne, Switzerland, 19/03/18. DOI: 10.1063/1.5049264

Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. / Sen, Mike Ah; Spinelli, Pierpaolo; Kikkert, Benjamin; Hoek, Eelko; Macco, Bart; Weeber, Arthur; Bronsveld, Paula.

SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. American Institute of Physics, 2018. 040001 (AIP Conference Proceedings; Vol. 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

AU - Sen,Mike Ah

AU - Spinelli,Pierpaolo

AU - Kikkert,Benjamin

AU - Hoek,Eelko

AU - Macco,Bart

AU - Weeber,Arthur

AU - Bronsveld,Paula

PY - 2018/8/10

Y1 - 2018/8/10

N2 - Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

AB - Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

UR - http://www.scopus.com/inward/record.url?scp=85051934540&partnerID=8YFLogxK

U2 - 10.1063/1.5049264

DO - 10.1063/1.5049264

M3 - Conference contribution

SN - 9780735417151

T3 - AIP Conference Proceedings

BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics

PB - American Institute of Physics

ER -

Sen MA, Spinelli P, Kikkert B, Hoek E, Macco B, Weeber A et al. Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells. In SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. American Institute of Physics. 2018. 040001. (AIP Conference Proceedings). Available from, DOI: 10.1063/1.5049264