Electron and hole spin dynamics in magnetic semiconductors

B. Koopmans; M. Kampen, van; W.J.M. Jonge, de

doi:10.1002/(SICI)1521-3951(199909)215:1<217::AID-PSSB217>3.0.CO;2-S

Electron and hole spin dynamics in magnetic semiconductors

B. Koopmans, M. Kampen, van, W.J.M. Jonge, de

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Abstract

We studied the electron and hole spin dynamics in magnetic semiconductor quantum wells on pico- and femtosecond time scales by means of time-resolved magnetization modulation spectroscopy. Spin relaxation times of ∼10 ps (electrons) and ∼100 to 200 fs (holes) are found at room temperature for 15/15 monolayer CdTe/Cd0.88Mn0.12Te structures. Monitoring the decay of an optically induced spin density as a function of the Mn concentration, we conclude that the loss of the electron spin is related to spin-flip scattering via exchange with the large magnetic moments at the Mn sites.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Physica Status Solidi B
Volume	215
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199909)215:1<217::AID-PSSB217>3.0.CO;2-S
Publication status	Published - 1999

Access to Document

10.1002/(SICI)1521-3951(199909)215:1<217::AID-PSSB217>3.0.CO;2-S

Cite this

@article{99f82f753bbd4453acfe1476d1d277c8,

title = "Electron and hole spin dynamics in magnetic semiconductors",

abstract = "We studied the electron and hole spin dynamics in magnetic semiconductor quantum wells on pico- and femtosecond time scales by means of time-resolved magnetization modulation spectroscopy. Spin relaxation times of ∼10 ps (electrons) and ∼100 to 200 fs (holes) are found at room temperature for 15/15 monolayer CdTe/Cd0.88Mn0.12Te structures. Monitoring the decay of an optically induced spin density as a function of the Mn concentration, we conclude that the loss of the electron spin is related to spin-flip scattering via exchange with the large magnetic moments at the Mn sites.",

author = "B. Koopmans and {Kampen, van}, M. and {Jonge, de}, W.J.M.",

year = "1999",

doi = "10.1002/(SICI)1521-3951(199909)215:1<217::AID-PSSB217>3.0.CO;2-S",

language = "English",

volume = "215",

pages = "217--222",

journal = "Physica Status Solidi B",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc",

number = "1",

}

TY - JOUR

T1 - Electron and hole spin dynamics in magnetic semiconductors

AU - Koopmans, B.

AU - Kampen, van, M.

AU - Jonge, de, W.J.M.

PY - 1999

Y1 - 1999

N2 - We studied the electron and hole spin dynamics in magnetic semiconductor quantum wells on pico- and femtosecond time scales by means of time-resolved magnetization modulation spectroscopy. Spin relaxation times of ∼10 ps (electrons) and ∼100 to 200 fs (holes) are found at room temperature for 15/15 monolayer CdTe/Cd0.88Mn0.12Te structures. Monitoring the decay of an optically induced spin density as a function of the Mn concentration, we conclude that the loss of the electron spin is related to spin-flip scattering via exchange with the large magnetic moments at the Mn sites.

AB - We studied the electron and hole spin dynamics in magnetic semiconductor quantum wells on pico- and femtosecond time scales by means of time-resolved magnetization modulation spectroscopy. Spin relaxation times of ∼10 ps (electrons) and ∼100 to 200 fs (holes) are found at room temperature for 15/15 monolayer CdTe/Cd0.88Mn0.12Te structures. Monitoring the decay of an optically induced spin density as a function of the Mn concentration, we conclude that the loss of the electron spin is related to spin-flip scattering via exchange with the large magnetic moments at the Mn sites.

U2 - 10.1002/(SICI)1521-3951(199909)215:1<217::AID-PSSB217>3.0.CO;2-S

DO - 10.1002/(SICI)1521-3951(199909)215:1<217::AID-PSSB217>3.0.CO;2-S

M3 - Article

SN - 0370-1972

VL - 215

SP - 217

EP - 222

JO - Physica Status Solidi B

JF - Physica Status Solidi B

IS - 1

ER -

Electron and hole spin dynamics in magnetic semiconductors

Abstract

Access to Document

Fingerprint

Cite this