Electromigration and coagulation in thin films of pure indium and pure tin

R. Gilde; H. J. van Daal; H. H. Brongersma

doi:10.1002/pssa.2211050222

Electromigration and coagulation in thin films of pure indium and pure tin

R. Gilde, H. J. van Daal, H. H. Brongersma

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The time to failure due to de‐current passage in pure indium and pure tin films is studied. Two regions of failure behaviour can clearly be distinguished. In one region failure starts with melting followed by coagulation. In the other the time to failure is mainly determined by electromigration. The corresponding activation energies for electromigration in In and Sn appear to be quite different. This is discussed in terms of different behaviours of the effective charge.

Original language	English
Pages (from-to)	493-499
Number of pages	7
Journal	Physica Status Solidi A : Applied Research
Volume	105
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211050222
Publication status	Published - 16 Feb 1988

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title = "Electromigration and coagulation in thin films of pure indium and pure tin",

abstract = "The time to failure due to de‐current passage in pure indium and pure tin films is studied. Two regions of failure behaviour can clearly be distinguished. In one region failure starts with melting followed by coagulation. In the other the time to failure is mainly determined by electromigration. The corresponding activation energies for electromigration in In and Sn appear to be quite different. This is discussed in terms of different behaviours of the effective charge.",

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N2 - The time to failure due to de‐current passage in pure indium and pure tin films is studied. Two regions of failure behaviour can clearly be distinguished. In one region failure starts with melting followed by coagulation. In the other the time to failure is mainly determined by electromigration. The corresponding activation energies for electromigration in In and Sn appear to be quite different. This is discussed in terms of different behaviours of the effective charge.

AB - The time to failure due to de‐current passage in pure indium and pure tin films is studied. Two regions of failure behaviour can clearly be distinguished. In one region failure starts with melting followed by coagulation. In the other the time to failure is mainly determined by electromigration. The corresponding activation energies for electromigration in In and Sn appear to be quite different. This is discussed in terms of different behaviours of the effective charge.

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Electromigration and coagulation in thin films of pure indium and pure tin

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