We analyze the electroluminescence spectrum of an STM-tip-induced quantum dot in a GaAs surface layer. A flexible model has been developed, that combines analytical and numerical methods and describes the key features of many-particle states in the STM-tip-induced quantum dot. The dot is characterized by its depth and lateral width, which are experimentally controlled by the bias and the tunneling current. We find, in agreement with experiment, that increasing voltage on the STM-tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the electron tunneling current through the STM-tip reveal a blue shift.
|Journal||Physica E: Low-Dimensional Systems & Nanostructures|
|Publication status||Published - 2004|
|Event||11th International Conference on Modulated Semiconductor Structures (MSS-11) - Nara, Japan|
Duration: 14 Jul 2003 → 18 Jul 2003
Conference number: 11
Bibliographical noteExtra issue: Proceedings of the 11th International Conference on Modulated Semiconductor Structures MSS11 held in Nara, Japan 14–18 July 2003
Croitoru, M. D., Gladilin, V. N., Fomin, V., Devreese, J. T., Kemerink, M., Koenraad, P. M., Sauthoff, K., & Wolter, J. H. (2004). Electroluminescence spectra of an STM-tip-induced quantum dot. Physica E: Low-Dimensional Systems & Nanostructures, 21(2-4), 270-274. https://doi.org/10.1016/j.physe.2003.11.028