Electro-optic voltage profiling of modulation-doped gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks; F.J.M. Schnitzeler; J.E.M. Haverkort; J.H. Wolter; K. Kort, de; G. Weimann

doi:10.1063/1.101284

Electro-optic voltage profiling of modulation-doped gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks, F.J.M. Schnitzeler, J.E.M. Haverkort, J.H. Wolter, K. Kort, de, G. Weimann

Photonics and Semiconductor Nanophysics

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Abstract

The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.

Original language	English
Pages (from-to)	1763-1765
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	18
DOIs	https://doi.org/10.1063/1.101284
Publication status	Published - 1989

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title = "Electro-optic voltage profiling of modulation-doped gallium arsenide/aluminum gallium arsenide heterostructures",

abstract = "The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.",

author = "P. Hendriks and F.J.M. Schnitzeler and J.E.M. Haverkort and J.H. Wolter and {Kort, de}, K. and G. Weimann",

year = "1989",

doi = "10.1063/1.101284",

language = "English",

volume = "54",

pages = "1763--1765",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Electro-optic voltage profiling of modulation-doped gallium arsenide/aluminum gallium arsenide heterostructures

AU - Hendriks, P.

AU - Schnitzeler, F.J.M.

AU - Haverkort, J.E.M.

AU - Wolter, J.H.

AU - Kort, de, K.

AU - Weimann, G.

PY - 1989

Y1 - 1989

N2 - The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.

AB - The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.

U2 - 10.1063/1.101284

DO - 10.1063/1.101284

M3 - Article

SN - 0003-6951

VL - 54

SP - 1763

EP - 1765

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Electro-optic voltage profiling of modulation-doped gallium arsenide/aluminum gallium arsenide heterostructures

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