Electro-optic voltage profiling of modulation-doped gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks, F.J.M. Schnitzeler, J.E.M. Haverkort, J.H. Wolter, K. Kort, de, G. Weimann

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Abstract

The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.
Original languageEnglish
Pages (from-to)1763-1765
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number18
DOIs
Publication statusPublished - 1989

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