Electro-optic tuning of a monolithically integrated widely tuneable InP laser with free-running and stabilized operation

We report on the free-running and frequency stabilized operation of a ring resonator-tuned full-band tuneable laser. The laser is a monolithically integrated semiconductor ring laser tuneable over 34 nm, from 1522-1556 nm, fabricated using a commercially-available, InP-based, active-passive foundry technology. The mode selection is implemented using the Vernier effect by reverse-biasing voltage-controlled electro-optically tuned ring resonators. The laser exhibits a typical intrinsic linewidth of 110 kHz over the C-band and a side-mode suppression ratio (SMSR) exceeding 50 dB. The linewidth over the tuning range does not significantly vary, showing that the tuning mechanism does not cause linewidth broadening. The power dissipated in the tuning elements is 1.4 mW per ring. Using the same reverse bias voltage-controlled electro-optic tuning, we also demonstrate the locking of the laser to a high-finesse etalon using Poun-Drever-Hall frequency locking. Our implementation requires a single control loop because of the reverse bias tuning. All deployed tuning effects in the phase modulators have the same sign therefore resulting in a flatter frequency dependent phase response compared to current injection feedback. The control loop has a bandwidth of 500 kHz and a control range of 2.9 GHz. We report 1 kHz level linewidth for millisecond observation times for the stabilized laser.