Abstract
For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a {V}-{ {pi }} {L}-{ {pi }} product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.
| Original language | English |
|---|---|
| Article number | 9277600 |
| Number of pages | 10 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 57 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Feb 2021 |
Funding
Manuscript received August 15, 2020; revised October 29, 2020; accepted November 18, 2020. Date of publication December 2, 2020; date of current version January 4, 2021. This work was supported by the Dutch Zwaartekracht Grant. (Corresponding author: Amir Abbas Kashi.) Amir Abbas Kashi, Jos J. G. M. Van der Tol, Kevin A. Williams, Weiming Yao, and Yuqing Jiao are with the Institute of Photonic Integration (IPI), Eindhoven University of Technology, 5600 Eindhoven, The Netherlands (e-mail: [email protected]).
Keywords
- electrooptic modulators
- integrated optics
- optical communication
- Optical device fabrication
- optical modulation
- optical polymers