Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

Amir Abbas Kashi; Jos J.G.M. van der Tol; Kevin A. Williams; Weiming Yao; Michael S. Lebby; Cory Pecinovsky; Yuqing Jiao

doi:10.1109/JQE.2020.3041943

Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

Amir Abbas Kashi (Corresponding author), Jos J.G.M. van der Tol, Kevin A. Williams, Weiming Yao, Michael S. Lebby, Cory Pecinovsky, Yuqing Jiao

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Abstract

For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a {V}-{ {pi }} {L}-{ {pi }} product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.

Original language	English
Article number	9277600
Number of pages	10
Journal	IEEE Journal of Quantum Electronics
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2020.3041943
Publication status	Published - Feb 2021

Keywords

electrooptic modulators
integrated optics
optical communication
Optical device fabrication
optical modulation
optical polymers

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10.1109/JQE.2020.3041943

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title = "Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform",

abstract = "For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a {V}-{ {pi }} {L}-{ {pi }} product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.",

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AU - van der Tol, Jos J.G.M.

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AU - Yao, Weiming

AU - Lebby, Michael S.

AU - Pecinovsky, Cory

AU - Jiao, Yuqing

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AB - For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a {V}-{ {pi }} {L}-{ {pi }} product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.

KW - electrooptic modulators

KW - integrated optics

KW - optical communication

KW - Optical device fabrication

KW - optical modulation

KW - optical polymers

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Electro-Optic Slot Waveguide Phase Modulator on the InP Membrane on Silicon Platform

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